Invention Application
- Patent Title: BIAS GENERATION AND DISTRIBUTION FOR A LARGE ARRAY OF SENSORS
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Application No.: US16659686Application Date: 2019-10-22
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Publication No.: US20200050232A1Publication Date: 2020-02-13
- Inventor: Sameer WADHWA , Yi WANG , Lennart Karl-Axel MATHE
- Applicant: QUALCOMM Incorporated
- Main IPC: G05F3/26
- IPC: G05F3/26 ; G05F3/24 ; G06F3/041

Abstract:
In certain aspects, a bias generation circuit comprises a bias voltage generator. The bias voltage generator has a main NMOS transistor having a drain and a gate of the main NMOS transistor both coupled to a first terminal, a main resistor having a first main resistor terminal and a second main resistor terminal, wherein the first main resistor terminal couples to a source of the main NMOS transistor; and a main PMOS transistor having a source of the main PMOS transistor coupled to the second main resistor terminal and a drain and a gate of the main PMOS transistor both coupled to a second terminal, wherein the second terminal couples to a main ground. The bias generation circuit further comprises an array of sensors coupled to the first terminal and the second terminal.
Public/Granted literature
- US10969816B2 Bias generation and distribution for a large array of sensors Public/Granted day:2021-04-06
Information query
IPC分类: