• 专利标题: Electronic Semiconducting Device and Method for Preparing the Electronic Semiconducting Device
  • 申请号: US16485816
    申请日: 2017-02-20
  • 公开(公告)号: US20200052210A1
    公开(公告)日: 2020-02-13
  • 发明人: Ulrich HeggemannMarkus HummertThomas RosenowMauro Furno
  • 申请人: Novaled GmbH
  • 优先权: EP17156902.3 20170220; EP17156904.9 20170220; EP17156906.4 20170220
  • 国际申请: PCT/EP2018/054162 WO 20170220
  • 主分类号: H01L51/00
  • IPC分类号: H01L51/00 C07F5/02 C07F3/06
Electronic Semiconducting Device and Method for Preparing the Electronic Semiconducting Device
摘要:
The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib)
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