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公开(公告)号:US12022672B2
公开(公告)日:2024-06-25
申请号:US17881878
申请日:2022-08-05
Applicant: Novaled GmbH
Inventor: Ulrich Heggemann , Markus Hummert
IPC: H01L51/50 , C07F3/02 , C07F3/06 , C07F5/02 , C09K11/06 , H10K50/155 , H10K50/17 , H10K59/35 , H10K71/00 , H10K71/30 , H10K85/30 , H10K85/60 , H10K30/30 , H10K50/11 , H10K50/16 , H10K50/165 , H10K50/18 , H10K71/16 , H10K102/10
CPC classification number: H10K50/155 , C07F3/02 , C07F3/06 , C07F5/022 , C09K11/06 , H10K50/171 , H10K59/35 , H10K71/00 , H10K71/30 , H10K85/30 , H10K85/322 , H10K85/341 , H10K85/381 , H10K85/60 , H10K85/622 , H10K85/633 , H10K85/636 , H10K85/657 , H10K85/6572 , C09K2211/1018 , H10K30/30 , H10K50/11 , H10K50/16 , H10K50/165 , H10K50/17 , H10K50/18 , H10K71/164 , H10K85/615 , H10K2102/103
Abstract: The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising
(i) at least one first hole transport matrix compound consisting of covalently bound atoms and
(ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom,
wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.-
公开(公告)号:US20220416188A1
公开(公告)日:2022-12-29
申请号:US17881878
申请日:2022-08-05
Applicant: Novaled GmbH
Inventor: Ulrich Heggemann , Markus Hummert
Abstract: The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom, wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.
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3.
公开(公告)号:US20200052210A1
公开(公告)日:2020-02-13
申请号:US16485816
申请日:2017-02-20
Applicant: Novaled GmbH
Inventor: Ulrich Heggemann , Markus Hummert , Thomas Rosenow , Mauro Furno
Abstract: The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib)
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公开(公告)号:US20200006689A1
公开(公告)日:2020-01-02
申请号:US16485839
申请日:2018-02-20
Applicant: Novaled GmbH
Inventor: Ulrich Heggemann , Markus Hummert
Abstract: The present invention relates to a display device comprising—a plurality of OLED pixels comprising at least two OLED pixels, the OLED pixels comprising an anode, a cathode, and a stack of organic layers, wherein the stack of organic layers—is arranged between and in contact with the cathode and the anode, and—comprises a first electron transport layer, a first hole transport layer, and a first light emitting layer provided between the first hole transport layer and the first electron transport layer, and—a driving circuit configured to separately driving the pixels of the plurality of OLED pixels, wherein, for the plurality of OLED pixels, the first hole transport layer is provided in the stack of organic layers as a common hole transport layer shared by the plurality of OLED pixels, and the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less, a method for preparing the display device and a chemical compound for use therein.
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公开(公告)号:US20230422603A1
公开(公告)日:2023-12-28
申请号:US18252916
申请日:2021-11-12
Applicant: Novaled GmbH
Inventor: Vladimir Uvarov , Markus Hummert , Thomas Rosenow , Steffen Runge , Regina Luschtinetz , Oliver Langguth , Jens Angermann
IPC: H10K85/60 , C07C311/48 , C07C317/32
CPC classification number: H10K85/60 , C07C311/48 , C07C317/32 , H10K50/17
Abstract: The present invention relates to an organic electronic device comprising a semiconductor layer which comprises a compound of formula (1).
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公开(公告)号:US20230247896A1
公开(公告)日:2023-08-03
申请号:US18003615
申请日:2021-07-26
Applicant: Novaled GmbH
Inventor: Vladimir Uvarov , Max Peter Nüllen , Ulrich Heggemann , Markus Hummert , Steffen Willmann , Regina Luschtinetz
CPC classification number: H10K85/331 , C07F15/025 , C09K11/06 , C07F1/08 , H10K50/17
Abstract: The present invention relates to compound represented by Formula (I) wherein M is a metal; L is a charge-neutral ligand, which coordinates to the metal M; n is an integer selected from 1 to 4, which corresponds to the oxidation number of M; m is an integer selected from 0 to 2; R1, R2 and R3 are substituents, wherein at least one R1, R2 and/or R3 is selected from a substituted C2 to C24 heteroaryl group, wherein at least one substituent is selected from halogen, F, Cl, CN, partially or fully fluorinated C1 to C6 alkyl, partially or fully fluorinated C1 to C6 alkoxy. The present invention also relates to a semiconductor material comprising at least one compound of formula (I), an semiconductor layer comprising at least one compound of formula (I) and an electronic device comprising at least one compound of formula (I). Exemplary compounds are e.g. metal complexes of 3-(2,3,5-trifluoro-6-(trifluoromethyl)pyridin-4-yl)pentane-2,4-dione, such as e.g. tris(((Z)-4-oxo-3-(2,3,5-trifluoro-6-(trifluoromethyl)pyridin-4-yl)pent-2-en-2-yl)oxy)iron and bis(((Z)-4-oxo-3-(2,3,5-trifluoro-6-(trifluoromethyl)pyridin-4-yl)pent-2-en-2-yl)oxy)copper.
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公开(公告)号:US20230242562A1
公开(公告)日:2023-08-03
申请号:US18003595
申请日:2021-07-26
Applicant: Novaled GmbH
Inventor: Vladimir Uvarov , Max Peter Nüllen , Ulrich Heggemann , Markus Hummert , Steffen Willmann , Regina Luschtinetz
CPC classification number: C07F15/025 , C07F1/08 , C07F5/069 , H10K85/331 , H10K85/371 , H10K85/324
Abstract: The present invention relates to a compound of Formula (I) wherein M is a metal; L is a charge-neutral ligand, which coordinates to the metal M; n is an integer selected from 1 to 4, which corresponds to the oxidation number of M; m is an integer selected from 0 to 2; R1, R2 and R3 are substituents, wherein at least one R1, R2 and/or R3 is selected from a substituted C6 to C24 aryl group, wherein at least one substituent of the substituted C6 to C24 aryl group is selected from CN or partially or fully fluorinated C1 to C12 alkyl. The present invention also relates to a semiconductor material comprising at least one compound of formula (I), an semiconductor layer comprising at least one compound of formula (I) and an electronic device comprising at least one compound of formula (I). Exemplary compounds are e.g. metal complexes of 4-(2,4-dioxopent-3-yl)-2,3,5,6-tetrafluorobenzonitrile, such as e.g. Fe, Al and Cu complexes thereof.
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公开(公告)号:US20230056322A1
公开(公告)日:2023-02-23
申请号:US17787352
申请日:2020-12-17
Applicant: Novaled GmbH
Inventor: Vladimir Uvarov , Markus Hummert , Ulrich Heggemann
Abstract: The present invention relates to an organic electronic device comprising a semiconductor layer which comprises a compound of formula (1).
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9.
公开(公告)号:US11322710B2
公开(公告)日:2022-05-03
申请号:US16485816
申请日:2018-02-20
Applicant: Novaled GmbH
Inventor: Ulrich Heggemann , Markus Hummert , Thomas Rosenow , Mauro Furno
IPC: H01L51/50 , C07F3/02 , C07F3/06 , H01L27/32 , H01L51/00 , H01L51/56 , C07F5/02 , C09K11/06 , H01L51/42
Abstract: The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib).
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10.
公开(公告)号:US20200343461A1
公开(公告)日:2020-10-29
申请号:US16955830
申请日:2018-12-20
Applicant: Novaled GmbH
Inventor: Markus Hummert , Thomas Rosenow , Tomas Kalisz
IPC: H01L51/00
Abstract: The present invention relates to an organic electronic device comprising at least one inverse coordination complex, the N inverse coordination complex comprising: (i) a core consisting of one atom or of a plurality of atoms forming together a covalent cluster; (ii) a first coordination sphere consisting of at least four electropositive atoms having each individually an electronegativity according to Allen of less than 2,4; and (iii) a second coordination sphere comprising a plurality of ligands; wherein the first coordination sphere is closer to the core than the second coordination sphere; and all atoms of the core have a higher electronegativity according to Allen than any of the electropositive atoms of the first coordination sphere and a method for preparing the same.
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