- 专利标题: Semiconductor Switching Device Separated by Device Isolation
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申请号: US16672723申请日: 2019-11-04
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公开(公告)号: US20200066774A1公开(公告)日: 2020-02-27
- 发明人: Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Szu-Ying Chen , Wei-Cheng Hsu , Hsiao-Hui Tseng
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H01L31/18
摘要:
A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the extensions are over a portion of the device isolation structure, and source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure.