- 专利标题： III-V CHIP PREPARATION AND INTEGRATION IN SILICON PHOTONICS
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申请号： US16389089申请日： 2019-04-19
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公开(公告)号： US20200083662A1公开(公告)日： 2020-03-12
- 发明人: Damien Lambert
- 申请人： Skorpios Technologies, Inc.
- 主分类号： H01S5/022
- IPC分类号： H01S5/022 ; G02B6/136 ; G02B6/122 ; H01L23/00 ; G02B6/42
摘要：
A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.
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