Invention Application
- Patent Title: POLARIZATION GATE STACK SRAM
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Application No.: US16732951Application Date: 2020-01-02
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Publication No.: US20200118616A1Publication Date: 2020-04-16
- Inventor: Daniel H. MORRIS , Uygar E. AVCI , Ian A. YOUNG
- Applicant: Intel Corporation
- Main IPC: G11C11/412
- IPC: G11C11/412 ; H01L27/11 ; G11C11/419 ; G11C8/16

Abstract:
One embodiment provides an apparatus. The apparatus includes a first inverter comprising a first pull up transistor and a first pull down transistor; a second inverter cross coupled to the first inverter, the second inverter comprising a second pull up transistor and a second pull down transistor; a first access transistor coupled to the first inverter; and a second access transistor coupled to the second inverter. A gate electrode of one transistor of each inverter comprises a polarization layer.
Public/Granted literature
- US10832761B2 Polarization gate stack SRAM Public/Granted day:2020-11-10
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