Invention Application
- Patent Title: MEMORY DEVICE WITH STRAP CELLS
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Application No.: US16744076Application Date: 2020-01-15
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Publication No.: US20200152242A1Publication Date: 2020-05-14
- Inventor: Jonathan Tsung-Yung CHANG , Cheng-Hung LEE , Chi-Ting CHENG , Hung-Jen LIAO , Jhon-Jhy LIAW , Yen-Huei CHEN
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C7/22 ; G11C7/10 ; G11C11/417 ; G11C7/12 ; G11C5/14

Abstract:
A device includes a memory array. The memory array includes a first sub-bank, a first strap cell coupled to the first sub-bank, and a first continuous data line. The first continuous data line includes a first portion and a second portion coupled to the first sub-bank via the first strap cell. The first portion of the first continuous data line is disposed above the first strap cell and the second portion of the first continuous data line is disposed above the first portion of the first continuous data line.
Public/Granted literature
- US10964355B2 Memory device with strap cells Public/Granted day:2021-03-30
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