Invention Application
- Patent Title: ADAPTIVE THERMAL OVERSHOOT AND CURRENT LIMITING PROTECTION FOR MOSFETS
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Application No.: US16751491Application Date: 2020-01-24
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Publication No.: US20200161293A1Publication Date: 2020-05-21
- Inventor: Qingjie Ma , Wei Xu , Jingwei Xu , Yang Wang
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H03K17/081 ; H03K17/0812

Abstract:
In a described example, an apparatus includes: a first metal oxide semiconductor field effect transistor (MOSFET) coupled between a first input terminal for receiving a supply voltage and an output terminal for coupling to a load, and having a first gate terminal; an enable terminal coupled to the first gate terminal for receiving an enable signal; a first current mirror coupled between the first input terminal and a first terminal of a first series resistor and having an input coupled to the first gate terminal; and a second MOSFET coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal.
Public/Granted literature
- US10896905B2 Adaptive thermal overshoot and current limiting protection for MOSFETs Public/Granted day:2021-01-19
Information query
IPC分类: