Invention Application
- Patent Title: EXTREME ULTRAVIOLET PHOTOLITHOGRAPHY SYSTEM AND METHOD
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Application No.: US16249046Application Date: 2019-01-16
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Publication No.: US20200166848A1Publication Date: 2020-05-28
- Inventor: Ming-Hsun TSAI , Han-Lung CHANG , Yen-Hsun CHEN , Shao-Hua WANG , Li-Jui CHEN , Po-Chung CHENG
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Main IPC: G03F7/20
- IPC: G03F7/20
Abstract:
A method of operating an extreme ultraviolet (EUV) lithography system includes directing a metallic droplet along a shroud, wherein the shroud has a first opening adjacent a droplet generator and a second opening adjacent an excitation region; partially shielding the second opening of the shroud; and emitting a laser beam encountering the metallic droplet to generate an EUV light.
Public/Granted literature
- US10779387B2 Extreme ultraviolet photolithography system and method Public/Granted day:2020-09-15
Information query
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