Invention Application
- Patent Title: INTEGRATED CIRCUIT HAVING HETEROGENEOUS CONTACTS AND SEMICONDUCTOR DEVICE INCLUDING THE INTEGRATED CIRCUIT
-
Application No.: US16774082Application Date: 2020-01-28
-
Publication No.: US20200168542A1Publication Date: 2020-05-28
- Inventor: Tae-hyung Kim , Jung-ho Do , Dae-young Moon , Sang-yeop Baeck , Jae-hyun Lim , Jae-seung Choi , Sang-shin Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3abc9580
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L29/45 ; H01L29/417 ; H01L21/8238 ; H01L27/02 ; H01L27/092 ; H01L23/522 ; H01L27/118 ; H01L27/088

Abstract:
Provided is an integrated circuit which includes: a plurality of conductive lines extending in a first horizontal direction on a plane separate from a gate line, and including first and second conductive lines; a source/drain contact having a bottom surface connected to a source/drain region, and including a lower source/drain contact and an upper source/drain contact which are connected to each other in a vertical direction; and a gate contact having a bottom surface connected to the gate line, and extending in the vertical direction, in which the upper source/drain contact is placed below the first conductive line, and the gate contact is placed below the second conductive line. A top surface of the lower source/drain contact may be larger than a bottom surface of the upper source/drain contact.
Public/Granted literature
- US11437315B2 Integrated circuit having heterogeneous gate contacts over active regions Public/Granted day:2022-09-06
Information query
IPC分类: