Invention Application
- Patent Title: HIGH POWER SILICON ON INSULATOR SWITCH
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Application No.: US16778198Application Date: 2020-01-31
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Publication No.: US20200169248A1Publication Date: 2020-05-28
- Inventor: Hojung Ju , Roberto Aparicio Joo
- Applicant: Integrated Device Technology, Inc.
- Main IPC: H03H11/06
- IPC: H03H11/06 ; H04B1/48 ; H03H11/34 ; H03K17/10 ; H03K17/041

Abstract:
An apparatus comprises a first series switch, a second series switch, a first shunt switch, a second shunt switch, a first DC blocking capacitor, and a second DC blocking capacitor. The first series switch may be coupled between a first RF port and a second RF port. The first shunt switch may be coupled between the first RF port and a first half supply voltage tab. The second series switch may be coupled between the second RF port and a third RF port. The second shunt switch may be coupled between the third RF port and a second half supply voltage tab. The first DC blocking capacitor may be coupled between the first half voltage tab and a circuit ground potential. The second DC blocking capacitor may be coupled between the second half supply voltage tab and the circuit ground potential.
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