HIGH POWER SILICON ON INSULATOR SWITCH
Abstract:
An apparatus comprises a first series switch, a second series switch, a first shunt switch, a second shunt switch, a first DC blocking capacitor, and a second DC blocking capacitor. The first series switch may be coupled between a first RF port and a second RF port. The first shunt switch may be coupled between the first RF port and a first half supply voltage tab. The second series switch may be coupled between the second RF port and a third RF port. The second shunt switch may be coupled between the third RF port and a second half supply voltage tab. The first DC blocking capacitor may be coupled between the first half voltage tab and a circuit ground potential. The second DC blocking capacitor may be coupled between the second half supply voltage tab and the circuit ground potential.
Information query
Patent Agency Ranking
0/0