INNOVATIVE WAY TO DESIGN SILICON TO OVERCOME RETICLE LIMIT
Abstract:
Embodiments of the invention include a stacked die system and methods for forming such systems. In an embodiment, the stacked die system may include a first die. The first die may include a device layer and a plurality of routing layers formed over the device layer. The plurality of routing layers may be segmented into a plurality of sub regions. In an embodiment no conductive traces in the plurality of routing layers pass over a boundary between any of the plurality of sub regions. In an embodiment, the stacked die system may also include a plurality of second dies stacked over the first die. According to an embodiment, at least a two of the second dies are communicatively coupled to each other by a die to die interconnect formed entirely within a single sub region in the first die.
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