Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US16653164Application Date: 2019-10-15
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Publication No.: US20200176374A1Publication Date: 2020-06-04
- Inventor: Tomoyuki TANAKA , Takahiro NAKAMURA
- Applicant: RENESAS ELECTRONICS CORPORATION
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1eaaa941
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H03F3/45 ; H03G3/30

Abstract:
In a semiconductor device having a variable gain amplifier, a setting error of a gain associated with a crosstalk noise is reduced. A switch block included in the variable gain amplifier includes a plurality of switch transistors Mp1, Mp2, MN1, and Mn2, and can variably set the parallel number of the switches used for coupling by selecting a forward coupling state for coupling the common wirings CSP, CSN to output wirings OUTP, OUTN, respectively, or a cross coupling state for coupling to OUTN, OUTP, respectively. Output wirings OUTN, OUTP form an output wiring pair by extending in a X direction while crossing each other through an underlying wiring layer ML[x-1]. At least one of the common wirings CSP, CSN is located next to the output wiring pair in a Y direction.
Public/Granted literature
- US10896876B2 Semiconductor device Public/Granted day:2021-01-19
Information query
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