- 专利标题: MICRO SEMICONDUCTOR STRUCTURE
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申请号: US16434786申请日: 2019-06-07
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公开(公告)号: US20200176508A1公开(公告)日: 2020-06-04
- 发明人: Chih-Ling WU , Ying-Tsang LIU , Pei-Hsin CHEN , Yi-Chun SHIH , Yi-Ching CHEN , Yu-Chu LI , Huan-Pu CHANG , Yu-Yun LO , Yi-Min SU , Tzu-Yang LIN , Yu-Hung LAI
- 申请人: PlayNitride Display Co., Ltd.
- 申请人地址: TW Zhunan Township
- 专利权人: PlayNitride Display Co., Ltd.
- 当前专利权人: PlayNitride Display Co., Ltd.
- 当前专利权人地址: TW Zhunan Township
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7346dbbc
- 主分类号: H01L27/15
- IPC分类号: H01L27/15 ; H01L33/36
摘要:
A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, a plurality of micro semiconductor devices disposed on the substrate, and a first supporting layer disposed between the substrate and the micro semiconductor devices. Each of the micro semiconductor devices has a first electrode and a second electrode disposed on a lower surface of the micro semiconductor devices. The lower surface includes a region, wherein the region is between the first electrode and the second electrode. An orthographic projection of the first supporting layer on the substrate at least overlaps an orthographic projection of a portion of the region on the substrate. The first supporting layer directly contacts the region.
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