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公开(公告)号：US20200176508A1
公开(公告)日：2020-06-04
申请号：US16434786
申请日：2019-06-07
发明人： Chih-Ling WU , Ying-Tsang LIU , Pei-Hsin CHEN , Yi-Chun SHIH , Yi-Ching CHEN , Yu-Chu LI , Huan-Pu CHANG , Yu-Yun LO , Yi-Min SU , Tzu-Yang LIN , Yu-Hung LAI
摘要： A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, a plurality of micro semiconductor devices disposed on the substrate, and a first supporting layer disposed between the substrate and the micro semiconductor devices. Each of the micro semiconductor devices has a first electrode and a second electrode disposed on a lower surface of the micro semiconductor devices. The lower surface includes a region, wherein the region is between the first electrode and the second electrode. An orthographic projection of the first supporting layer on the substrate at least overlaps an orthographic projection of a portion of the region on the substrate. The first supporting layer directly contacts the region.
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公开(公告)号：US20240347673A1
公开(公告)日：2024-10-17
申请号：US18323601
申请日：2023-05-25
发明人： Yu-Yun LO , Bo-Wei WU , Kuo-Wei CHEN , Shih-Yao LIANG
IPC分类号： H01L33/30 , H01L25/075 , H01L25/16 , H01L33/50
CPC分类号： H01L33/305 , H01L25/0753 , H01L25/167 , H01L33/502
摘要： A micro light-emitting diode structure includes a first-type semiconductor layer, a light-emitting layer, a second-type semiconductor layer, and a base layer stacked with each other. A width of the light-emitting layer is greater than that of the first-type semiconductor layer and that of the second-type semiconductor layer. A width of the base layer is at least greater than that of the second-type semiconductor layer. A manufacturing method of the micro light-emitting diode structure by mixing dry etching and wet etching. The manufacturing method not only reduces the time that the semiconductor layers are in contact with the etching solution in the wet etching process to increase the etching stability, but avoids the dangling bond effect on the sidewall caused by the dry etching. Therefore, a combination of the advantages of the two etchings further increases the external quantum efficiency.
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公开(公告)号：US20230112423A1
公开(公告)日：2023-04-13
申请号：US17574891
申请日：2022-01-13
发明人： Shiang-Ning YANG , Yung-Chi CHU , Yu-Yun LO , Bo-Wei WU , Yu-Ya PENG
摘要： A micro LED display panel is provided. The micro LED display panel includes a driving substrate and a plurality of bonding pads disposed on the driving substrate and spaced apart from each other. The micro LED display panel also includes a plurality of micro LED structures electrically connected to the bonding pads. Each micro LED structure includes at least one electrode disposed on the side of the micro LED structure facing the driving substrate. The electrode has a normal contact surface and a side contact surface. The normal contact surface faces the driving substrate, and the side contact surface is laterally connected to the corresponding bonding pad.
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公开(公告)号：US20230006106A1
公开(公告)日：2023-01-05
申请号：US17543836
申请日：2021-12-07
发明人： Yu-Yun LO , Bo-Wei WU , Chang-Feng TSAI
IPC分类号： H01L33/48 , H01L25/075 , H01L33/38 , H01L33/12
摘要： A micro LED display device includes a display back plate having a first connecting electrode and a second connecting electrode, a micro LED structure disposed on the display back plate, and a first bonding structure and a second bonding structure disposed between the display back plate and the micro LED structure. The micro LED structure includes an epitaxial structure, and a first electrode and a second disposed on the side of the epitaxial structure closest to the display back plate. The orthogonal projections of the extension portions of the first electrode and the second electrode both exceed the orthogonal projection of the epitaxial structure on the display back plate. Neither the orthogonal projection of the first bonding structure nor the orthogonal projection of the second bonding structure overlaps the orthogonal projection of the bottom surface of the epitaxial structure on the display back plate.
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公开(公告)号：US20210249566A1
公开(公告)日：2021-08-12
申请号：US17244690
申请日：2021-04-29
发明人： Shiang-Ning YANG , Yi-Min SU , Yu-Yun LO , Bo-Wei WU , Tzu-Yu TING
IPC分类号： H01L33/44 , H01L33/12 , H01L25/075 , H01L25/16 , H01L33/20
摘要： An epitaxial structure adapted to a semiconductor pickup element is provided. The semiconductor pickup element has at least one guiding structure and provided with a pickup portion. The epitaxial structure includes a semiconductor layer corresponding to the pickup portion and capable of being picked up by the semiconductor pickup element. The epitaxial structure also includes at least one alignment structure disposed on the semiconductor layer and corresponding to the at least one guiding structure, so that the epitaxial structure and the semiconductor pickup element are positioned relative to each other. The number of the at least one alignment structure matches the number of the at least one guiding structure.
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公开(公告)号：US20220406961A1
公开(公告)日：2022-12-22
申请号：US17516004
申请日：2021-11-01
发明人： Shen-Jie WANG , Yu-Yun LO , Yen-Lin LAI , Tzu-Yang LIN
摘要： A micro light-emitting device has an epitaxial die having a top surface, a bottom surface and a plurality of sidewalls connected between the top surface and the bottom surface. A roughness of at least one part of the surface of at least one of the sidewalls is smaller than or equal to 10 nm, or an etch-pit density of the at least one part of the surface is smaller than 108/cm2, or a flatness tolerance of the at least one part of the surface is greater than 0.1 times a thickness of the epitaxial die. Therefore, the serious attenuation of the peak external quantum efficiency is prevented due to the sidewall damage effect after the light-emitting device is miniaturized.
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公开(公告)号：US20220367769A1
公开(公告)日：2022-11-17
申请号：US17473348
申请日：2021-09-13
发明人： Bo-Wei WU , Yu-Yun LO , Shiang-Ning YANG
IPC分类号： H01L33/62 , H01L33/54 , H01L25/075 , H01L33/12
摘要： A micro light-emitting component, a micro light-emitting structure and a display device are disclosed. The micro light-emitting component has a micro light-emitting chip and a buffer element. The micro light-emitting chip has a first surface, a second surface opposite to the first surface and a plurality of outer sidewalls. The buffer element is disposed on the outer sidewalls or the first surface of the micro light-emitting chip. The buffer element has an inner surface and an outer surface. An angle is defined between the inner surface and the first surface or an extended surface of the first surface. The angle is greater than or equal to 90 degrees and less than or equal to 180 degrees. Therefore, the buffer element prevents the first surface of the micro light-emitting chip from damaging by collision when the micro light-emitting chip is dropped with the first surface facing down during a transferring procedure.
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8.发明申请公开(公告)号：US20220173273A1
公开(公告)日：2022-06-02
申请号：US17324882
申请日：2021-05-19
发明人： Yu-Hung LAI , Yu-Yun LO
摘要： A micro light-emitting diode structure is provided. The micro light-emitting diode structure includes a first-type semiconductor layer, a light-emitting layer disposed on the first-type semiconductor layer, and a second-type semiconductor layer disposed on the light-emitting layer. Moreover, the micro light-emitting diode structure includes a first electrode and a second electrode disposed on the top surface of the second-type semiconductor layer and electrically connected to the first-type semiconductor layer and the second-type semiconductor layer, respectively. The first electrode includes two portions, and a rounded corner is formed at the junction therebetween. From the top view of the micro light-emitting diode structure, the light-emitting layer and the second-type semiconductor layer define a mesa region. The area of the mesa region is smaller than the area of the first-type semiconductor layer. The mesa region exposes the first top surface of the first-type semiconductor layer. The first top surface surrounds the mesa region.
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