发明申请
- 专利标题: MEMORY CIRCUIT
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申请号: US16534992申请日: 2019-08-07
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公开(公告)号: US20200185010A1公开(公告)日: 2020-06-11
- 发明人: Su-Chueh Lo , Ken-Hui Chen , Kuen-Long Chang , Ming-Chih Hsieh
- 申请人: MACRONIX International Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: MACRONIX International Co., Ltd.
- 当前专利权人: MACRONIX International Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G11C5/14
- IPC分类号: G11C5/14 ; G11C7/10 ; G11C7/06
摘要:
A data receiving stage circuit of a memory circuit receives a serial input signal and a chip enable signal. A data writing circuit of the memory circuit generates at least one of a command signal and a data signal according to the serial input signal. A power supply circuit of the memory circuit generates an operating voltage for a memory cell array to perform a data access operation. A data output stage circuit of the memory circuit outputs a readout data. A controller of the memory circuit performs a switching operation of an operating state of the memory circuit according to a change of the chip enable signal. The controller determines a disable or enable state of the data receiving stage circuit, the data writing circuit, the power supply circuit, and the data output stage circuit according to the operating state.
公开/授权文献
- US10770119B2 Memory circuit 公开/授权日:2020-09-08
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