Invention Application
- Patent Title: BACK-TO-BACK POWER FIELD-EFFECT TRANSISTORS WITH ASSOCIATED CURRENT SENSORS
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Application No.: US16368313Application Date: 2019-03-28
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Publication No.: US20200227551A1Publication Date: 2020-07-16
- Inventor: Indumini Ranmuthu
- Applicant: Texas Instruments Incorporated
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/088 ; G06F13/42 ; G01R19/00
Abstract:
Back-to-back power field-effect transistors with associated current sensors are disclosed. An example apparatus includes a first power field-effect transistor (FET) having a first source, and a second power FET having a second source. The first and second power FETs share a common drain. The first and second sources positioned on a first side of a substrate and the common drain positioned on a second side of the substrate opposite the first side. The example apparatus includes a current sensing FET positioned between a first portion of the first source of the first power FET and a second portion of the first source of the first power FET. The current sensing FET senses a current passing through the first and second power FETs.
Public/Granted literature
- US11063146B2 Back-to-back power field-effect transistors with associated current sensors Public/Granted day:2021-07-13
Information query
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