The first object of the invention is directed to a method for modulating the number of charge carriers p in CuxCryO2, the method comprising the steps of (a) depositing a film of CuxCryO2 on a substrate; and (b) annealing at a temperature T the film of deposited CuxCryO2, wherein the subscripts x and y are positive numbers whose the sum is equal or inferior to 2. The method is remarkable in that the log (p)=α T2+β T+γ, wherein the temperature T is expressed degree Celsius, wherein α is a first parameter ranging from −0.00011 to −0.009, wherein β is a second parameter ranging from +0.12 to +0.14, and wherein γ is a third parameter ranging from −27.40 to −22.42. The second object of the invention is directed to a semiconductor comprising CuxCryO2 deposited on a substrate and obtainable by the method in accordance with the first object of the invention.