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    HYDROGEN POTENTIAL SENSOR
    2.
    发明公开
    HYDROGEN POTENTIAL SENSOR 审中-公开

    公开(公告)号：US20230324330A1

    公开(公告)日：2023-10-12

    申请号：US18036430

    申请日：2021-11-10

    申请人： LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)

    发明人： Cesar PASCUAL GARCIA ,  Damien LENOBLE

    IPC分类号： G01N27/414

    CPC分类号： G01N27/414

    摘要： A pH sensor comprises: a chamber for receiving an electrolyte solution; a first and a second ion-sensitive field effect transistor (ISFETs), each of the first and second ISFETs having a source terminal, a drain terminal and a transistor channel extending between the source terminal and the drain terminal, a dielectric layer with a sensing surface arranged in the chamber so as to be contactable by the electrolyte solution, the dielectric layer separating the sensing surface from the transistor channel; a first measurement circuit configured to measure a first source-drain resistance across the transistor channel of the first ISFET; and a second measurement circuit configured to measure a second source-drain resistance across the transistor channel of the second ISFET. The first and second measurement circuits include a common reference electrode, the reference electrode arranged contactable by the electrolyte solution in the chamber. The dielectric layer of first ISFET has a first thickness and the dielectric layer of the second ISFET has a second thickness different from the first thickness.

    SiO2 THIN FILM PRODUCED BY ATOMIC LAYER DEPOSITION AT ROOM TEMPERATURE
    3.
    发明申请
    SiO2 THIN FILM PRODUCED BY ATOMIC LAYER DEPOSITION AT ROOM TEMPERATURE 有权

    公开(公告)号：US20210310121A1

    公开(公告)日：2021-10-07

    申请号：US17352523

    申请日：2021-06-21

    申请人： LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)

    发明人： Didier ARL ,  Noureddine ADJEROUD ,  Damien LENOBLE

    IPC分类号： C23C16/455 ,  C23C16/40

    摘要： A method for atomic layer deposition for the deposition of silicon oxide on a substrate, performed at room temperature, involving at least three precursors, being silicon tetrachloride, water and one Lewis base agent, being in various instances ammonia. The process comprises the steps of exposing on the substrate during an exposure time (a) the one Lewis base agent, (b) the silicon tetrachloride, and (c) the water. The process is remarkable in that at least one step of purge with nitrogen gas is performed after each of the steps (a), (b) and (c) during a purge time. Additionally, a film of silicon oxide which is remarkable in that it comprises a low level of chlorine contaminant and a significant degree of porosity with pores, the pores being in various instances micropores, mesopores or nanopores.

    TAILORING HOLES CARRIER CONCENTRATION IN CuXCrYO2
    6.
    发明申请
    TAILORING HOLES CARRIER CONCENTRATION IN CuXCrYO2 审中-公开

    公开(公告)号：US20200266058A1

    公开(公告)日：2020-08-20

    申请号：US16651543

    申请日：2018-09-27

    申请人： LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)

    发明人： Damien LENOBLE

    IPC分类号： H01L21/02 ,  C04B35/12 ,  H01L29/24

    摘要： The first object of the invention is directed to a method for modulating the number of charge carriers p in CuxCryO2, the method comprising the steps of (a) depositing a film of CuxCryO2 on a substrate; and (b) annealing at a temperature T the film of deposited CuxCryO2, wherein the subscripts x and y are positive numbers whose the sum is equal or inferior to 2. The method is remarkable in that the log (p)=α T2+β T+γ, wherein the temperature T is expressed degree Celsius, wherein α is a first parameter ranging from −0.00011 to −0.009, wherein β is a second parameter ranging from +0.12 to +0.14, and wherein γ is a third parameter ranging from −27.40 to −22.42. The second object of the invention is directed to a semiconductor comprising CuxCryO2 deposited on a substrate and obtainable by the method in accordance with the first object of the invention.

    METAL-CNT COMPOSITE, PRODUCTION METHOD AND MATERIALS THEREFOR
    7.
    发明申请
    METAL-CNT COMPOSITE, PRODUCTION METHOD AND MATERIALS THEREFOR 有权

    公开(公告)号：US20220363542A1

    公开(公告)日：2022-11-17

    申请号：US17259211

    申请日：2019-08-22

    申请人： LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)

    发明人： Antoine DUHAIN ,  Marc MICHEL ,  Guillaume LAMBLIN ,  Damien LENOBLE

    IPC分类号： C01B32/168 ,  C23C18/16

    摘要： According to a first aspect of the invention, a method for producing a metal-CNT composite material is proposed. The method includes providing a layer of CNT by depositing CNT coated with a polyphenol or poly(catecholamine) coating and filling the interstices of the carbon nanotubes layer with a metal so as to form a metal matrix, in which CNT are embedded. The filling is effected by electrode position or by electroless deposition. The polyphenol or poly(catecholamine) coating is crosslinked by metal ions, the metal ions promoting, as metal seeds, adhesion and/or growth of the metal matrix during the filling step. A further aspect of the invention relates to the metal-CNT composite obtainable by the method.

    SiO2 Thin Film Produced By Atomic Layer Deposition At Room Temperature
    9.
    发明申请
    SiO2 Thin Film Produced By Atomic Layer Deposition At Room Temperature 审中-公开

    公开(公告)号：US20180223427A1

    公开(公告)日：2018-08-09

    申请号：US15751389

    申请日：2016-08-08

    申请人： Luxembourg Institute Of Science And Technology (LIST)

    发明人： Didier ARL ,  Noureddine ADJEROUD ,  Damien LENOBLE

    IPC分类号： C23C16/455 ,  C23C16/40

    CPC分类号： C23C16/45534 ,  C23C16/402 ,  C23C16/45527

    摘要： A process of atomic layer deposition for the deposition of silicon oxide on a substrate, performed at room temperature, involving at least three precursors, being silicon tetrachloride, water and one Lewis base agent, being in various instances ammonia. The process comprises the steps of exposing on the substrate during an exposure time (a) the one Lewis base agent, (b) the silicon tetrachloride, and (c) the water. The process is remarkable in that at least one step of purge with nitrogen gas is performed after each of the steps (a), (b) and (c) during a purge time. Additionally, a film of silicon oxide which is remarkable in that it comprises a low level of chlorine contaminant and a significant degree of porosity with pores, the pores being in various instances micropores, mesopores or nanopores.