- 专利标题： SOI WAFERS AND DEVICES WITH BURIED STRESSOR
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申请号： US16283578申请日： 2019-02-22
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公开(公告)号： US20200273991A1公开(公告)日： 2020-08-27
- 发明人: Paul A. Clifton , Andreas Goebel
- 申请人： Acorn Technologies, Inc.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L27/12 ; H01L21/02 ; H01L21/762
摘要：
A semiconductor structure includes a layer arrangement consisting of, in sequence, a semiconductor-on-insulator layer (SOI) over a buried oxide (BOX) layer over a buried stressor (BS) layer with a silicon bonding layer (BL) intervening between the BOX and the BS layers. The semiconductor structure may be created by forming the BS layer on a substrate of a first wafer; growing the BL layer at the surface of the BS layer; wafer bonding the first wafer to a second wafer having a silicon oxide layer formed on a silicon substrate such that the silicon oxide layer of the second wafer is bonded to the BL layer of the first wafer, and thereafter removing a portion of the silicon substrate of the second wafer.
公开/授权文献
- US10833194B2 SOI wafers and devices with buried stressor 公开/授权日：2020-11-10
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