公开(公告)号：US10147798B2

公开(公告)日：2018-12-04

申请号：US15451164

申请日：2017-03-06

申请人： Acorn Technologies, Inc.

发明人： Paul A. Clifton ,  Andreas Goebel

IPC分类号： H01L29/49 ,  H01L29/36 ,  H01L29/51 ,  H01L21/28 ,  H01L29/66 ,  H01L29/08

摘要： An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm thickness disposed between and in contact with both the M-Layer and the S-Layer. The I-Layer is an oxide of a metal or a semiconductor. The conductor of the M-Layer that is adjacent to and in direct contact with the I-Layer is a metal oxide that is electrically conductive, chemically stable and unreactive at its interface with the I-Layer at temperatures up to 450° C. The electrical contact structure has a specific contact resistivity of less than or equal to approximately 10−5-10−7 Ω-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 2×1019 cm−3 and less than approximately 10−8 Ω-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 1020 cm−3.

公开(公告)号：US10008827B2

公开(公告)日：2018-06-26

申请号：US15000975

申请日：2016-04-04

申请人： Acorn Technologies, Inc.

发明人： Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC分类号： H01S5/00 ,  H01S5/187 ,  H01L31/0352 ,  H01S5/22 ,  H01S5/32 ,  H01L33/34 ,  B82Y20/00 ,  H01L31/028 ,  H01L31/18 ,  H01S5/125 ,  H01S5/34 ,  H01L27/146 ,  H01S5/227

CPC分类号： H01S5/3201 ,  B82Y20/00 ,  H01L27/14625 ,  H01L27/14643 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/1808 ,  H01L33/34 ,  H01S5/125 ,  H01S5/187 ,  H01S5/2203 ,  H01S5/227 ,  H01S5/3223 ,  H01S5/3224 ,  H01S5/3427 ,  Y02E10/547

摘要： Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

公开(公告)号：US20180083115A1

公开(公告)日：2018-03-22

申请号：US15451164

申请日：2017-03-06

申请人： Acorn Technologies, Inc.

发明人： Paul A. Clifton ,  Andreas Goebel

IPC分类号： H01L29/49 ,  H01L21/28 ,  H01L29/36 ,  H01L29/51

CPC分类号： H01L29/4966 ,  H01L21/28017 ,  H01L29/0895 ,  H01L29/36 ,  H01L29/517 ,  H01L29/66643

摘要： An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm thickness disposed between and in contact with both the M-Layer and the S-Layer. The I-Layer is an oxide of a metal or a semiconductor. The conductor of the M-Layer that is adjacent to and in direct contact with the I-Layer is a metal oxide that is electrically conductive, chemically stable and unreactive at its interface with the I-Layer at temperatures up to 450° C. The electrical contact structure has a specific contact resistivity of less than or equal to approximately 10−5-10−7 Ω-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 2×1019 cm−3 and less than approximately 10−8 Ω-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 1020 cm−3.

公开(公告)号：US09583614B2

公开(公告)日：2017-02-28

申请号：US14298810

申请日：2014-06-06

申请人： Acorn Technologies, Inc.

发明人： Daniel E. Grupp ,  Daniel J. Connelly

IPC分类号： H01L21/338 ,  H01L29/78 ,  H01L21/285 ,  H01L29/08 ,  H01L29/45 ,  H01L29/47 ,  H01L29/49 ,  H01L29/66 ,  H01L29/812 ,  H01L29/786

CPC分类号： H01L29/47 ,  H01L21/28537 ,  H01L23/535 ,  H01L29/0649 ,  H01L29/0895 ,  H01L29/456 ,  H01L29/4908 ,  H01L29/66143 ,  H01L29/66636 ,  H01L29/66643 ,  H01L29/66666 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66848 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7839 ,  H01L29/785 ,  H01L29/78696 ,  H01L29/812 ,  H01L29/8126 ,  Y10S438/958

摘要： A transistor having at least one passivated Schottky barrier to a channel includes an insulated gate structure on a p-type substrate in which the channel is located beneath the insulated gate structure. The channel and the insulated gate structure define a first and second undercut void regions that extend underneath the insulated gate structure toward the channel from a first and a second side of the insulated gate structure, respectively. A passivation layer is included on at least one exposed sidewall surface of the channel and metal source and drain terminals are located on respective first and second sides of the channel, including on the passivation layer and within the undercut void regions beneath the insulated gate structure. At least one of the metal source and drain terminals comprises a metal that has a work function near a valence band of the p-type substrate.

摘要翻译： 具有至少一个通道的钝化肖特基势垒的晶体管包括在p型衬底上的绝缘栅极结构，其中沟道位于绝缘栅极结构之下。 通道和绝缘栅极结构分别限定了从绝缘栅极结构的第一和第二侧分别延伸到绝缘栅极结构下方朝向沟道的第一和第二底切空隙区域。 钝化层包括在通道的至少一个暴露的侧壁表面上，并且金属源极和漏极端子位于通道的相应的第一和第二侧上，包括在钝化层上以及绝缘栅极结构下方的底切空隙区域内。 金属源极和漏极端子中的至少一个包括在p型衬底的价带附近具有功函数的金属。

公开(公告)号：US09270083B2

公开(公告)日：2016-02-23

申请号：US14698759

申请日：2015-04-28

申请人： Acorn Technologies, Inc.

发明人： Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC分类号： H01S5/00 ,  H01S5/187 ,  H01L31/0352 ,  H01S5/22 ,  H01S5/32 ,  H01L33/34 ,  B82Y20/00 ,  H01L31/028 ,  H01L31/18 ,  H01S5/125 ,  H01S5/34 ,  H01S5/227

CPC分类号： H01S5/187 ,  B82Y20/00 ,  H01L27/14625 ,  H01L27/14643 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/1808 ,  H01L33/34 ,  H01S5/125 ,  H01S5/2203 ,  H01S5/227 ,  H01S5/3201 ,  H01S5/3223 ,  H01S5/3224 ,  H01S5/3427 ,  Y02E10/547

摘要： Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

公开(公告)号：US09209261B2

公开(公告)日：2015-12-08

申请号：US14743916

申请日：2015-06-18

申请人： Acorn Technologies, Inc.

发明人： Daniel E. Grupp ,  Daniel J. Connelly

IPC分类号： H01L29/66 ,  H01L21/82 ,  H01L29/45 ,  H01L29/16 ,  H01L29/161 ,  H01L29/47 ,  H01L29/78 ,  H01L29/08

CPC分类号： H01L29/456 ,  H01L21/28537 ,  H01L29/0895 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66143 ,  H01L29/66643 ,  H01L29/78 ,  H01L29/7839 ,  H01L29/785 ,  H01L29/806 ,  H01L29/812 ,  H01L29/872

摘要： An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.

摘要翻译： 一种电气装置，其中界面层设置在导体和半导体之间并与导体和半导体接触。

公开(公告)号：US20150287800A1

公开(公告)日：2015-10-08

申请号：US14743916

申请日：2015-06-18

申请人： Acorn Technologies, Inc.

发明人： Daniel E. Grupp ,  Daniel J. Connelly

IPC分类号： H01L29/45 ,  H01L29/08 ,  H01L29/47 ,  H01L29/78 ,  H01L29/16 ,  H01L29/161

CPC分类号： H01L29/456 ,  H01L21/28537 ,  H01L29/0895 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66143 ,  H01L29/66643 ,  H01L29/78 ,  H01L29/7839 ,  H01L29/785 ,  H01L29/806 ,  H01L29/812 ,  H01L29/872

摘要： An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.

摘要翻译： 一种电气装置，其中界面层设置在导体和半导体之间并与导体和半导体接触。

公开(公告)号：US20150249320A1

公开(公告)日：2015-09-03

申请号：US14698759

申请日：2015-04-28

申请人： Acorn Technologies, Inc.

发明人： Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC分类号： H01S5/187 ,  H01S5/34 ,  H01S5/125 ,  H01S5/32 ,  H01S5/22

CPC分类号： H01S5/187 ,  B82Y20/00 ,  H01L27/14625 ,  H01L27/14643 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/1808 ,  H01L33/34 ,  H01S5/125 ,  H01S5/2203 ,  H01S5/227 ,  H01S5/3201 ,  H01S5/3223 ,  H01S5/3224 ,  H01S5/3427 ,  Y02E10/547

摘要： Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

摘要翻译： 提供拉伸应变锗，其可以被充分应变以提供几乎直接的带隙材料或直接带隙材料。 与锗区接触的压应力或拉应力应力源材料在锗区域引起单轴或双轴拉伸应变。 应力材料可以包括氮化硅或硅锗。 所得到的应变锗结构可用于发射或检测光子，包括例如在谐振腔内产生光子以提供激光。

公开(公告)号：US08916437B2

公开(公告)日：2014-12-23

申请号：US13757597

申请日：2013-02-01

申请人： Acorn Technologies, Inc.

发明人： Daniel E. Grupp ,  Daniel J. Connelly

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L29/812 ,  H01L29/45 ,  H01L29/47 ,  H01L29/08 ,  H01L21/285 ,  H01L29/786

CPC分类号： H01L29/47 ,  H01L21/28537 ,  H01L23/535 ,  H01L29/0649 ,  H01L29/0895 ,  H01L29/456 ,  H01L29/4908 ,  H01L29/66143 ,  H01L29/66636 ,  H01L29/66643 ,  H01L29/66666 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66848 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7839 ,  H01L29/785 ,  H01L29/78696 ,  H01L29/812 ,  H01L29/8126 ,  Y10S438/958

摘要： A transistor having at least one passivated Schottky barrier to a channel includes an insulated gate structure on a p-type substrate in which the channel is located beneath the insulated gate structure. The channel and the insulated gate structure define a first and second undercut void regions that extend underneath the insulated gate structure toward the channel from a first and a second side of the insulated gate structure, respectively. A passivation layer is included on at least one exposed sidewall surface of the channel, and metal source and drain terminals are located on respective first and second sides of the channel, including on the passivation layer and within the undercut void regions beneath the insulated gate structure. At least one of the metal source and drain terminals comprises a metal that has a work function near a valence band of the p-type substrate.

摘要翻译： 具有至少一个通道的钝化肖特基势垒的晶体管包括在p型衬底上的绝缘栅极结构，其中沟道位于绝缘栅极结构之下。 通道和绝缘栅极结构分别限定了从绝缘栅极结构的第一和第二侧分别延伸到绝缘栅极结构下方朝向沟道的第一和第二底切空隙区域。 钝化层包括在通道的至少一个暴露的侧壁表面上，并且金属源极和漏极端子位于通道的相应的第一和第二侧上，包括在钝化层上以及绝缘栅极结构下面的底切空隙区域 。 金属源极和漏极端子中的至少一个包括在p型衬底的价带附近具有功函数的金属。

公开(公告)号：US20130284269A1

公开(公告)日：2013-10-31

申请号：US13870698

申请日：2013-04-25

申请人： Acorn Technologies, Inc.

发明人： Paul A. Clifton

IPC分类号： H01L31/068

CPC分类号： H01L31/068 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/035281 ,  H01L31/0687 ,  H01L31/07 ,  H01L31/103 ,  H01L31/107 ,  H01L31/109 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/184 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： Improved silicon solar cells, silicon image sensors and like photosensitive devices are made to include strained silicon at or sufficiently near the junctions or other active regions of the devices to provide increased sensitivity to longer wavelength light. Strained silicon has a lower band gap than conventional silicon. One method of making a solar cell that contains tensile strained silicon etches a set of parallel trenches into a silicon wafer and induces tensile strain in the silicon fins between the trenches. The method may induce tensile strain in the silicon fins by filling the trenches with compressively strained silicon nitride or silicon oxide. A deposited layer of compressively strained silicon nitride adheres to the walls of the trenches and generates biaxial tensile strain in the plane of adjacent silicon fins.

摘要翻译： 改进的硅太阳能电池，硅图像传感器和类似的光敏器件被制成包括在器件的结或其他有源区处或足够靠近的应变硅以提供对较长波长光的增强的灵敏度。 应变硅具有比常规硅更低的带隙。 制造包含拉伸应变硅的太阳能电池的一种方法将一组平行的沟槽蚀刻成硅晶片并且在沟槽之间的硅散热片中引起拉伸应变。 该方法可以通过用压缩应变的氮化硅或氧化硅填充沟槽来引起硅散热片中的拉伸应变。 压缩应变氮化硅的沉积层粘附到沟槽的壁上并在相邻的硅散热片的平面中产生双轴拉伸应变。