- 专利标题： SELF-ALIGNED CROSS-POINT PHASE CHANGE MEMORY-SWITCH ARRAY
-
申请号： US16877166申请日： 2020-05-18
-
公开(公告)号： US20200279889A1公开(公告)日： 2020-09-03
- 发明人: Jong Lee , Gianpaolo Spadini , Derchang Kau
- 申请人： Micron Technology, Inc.
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; H01L45/00
摘要：
Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
公开/授权文献
- US11563055B2 Self-aligned cross-point phase change memory-switch array 公开/授权日：2023-01-24
信息查询
IPC分类:
