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公开(公告)号：US20200279889A1
公开(公告)日：2020-09-03
申请号：US16877166
申请日：2020-05-18
Applicant: Micron Technology, Inc.
Inventor： Jong Lee , Gianpaolo Spadini , Derchang Kau
Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
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