- 专利标题： NONPOLAR III-NITRIDES SOLAR CELL DEVICE
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申请号： US16811355申请日： 2020-03-06
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公开(公告)号： US20200287069A1公开(公告)日： 2020-09-10
- 发明人: Xuanqi Huang , Yuji Zhao
- 申请人： Xuanqi Huang , Yuji Zhao
- 主分类号： H01L31/0735
- IPC分类号： H01L31/0735 ; H01L31/0304 ; H01L31/0352 ; H01L31/0224
摘要：
A solar cell including a nonpolar m-plane GaN substrate, an n-type III-nitride layer, a III-nitride active region, and a p-type III-nitride layer. In one example, the solar cell includes a nonpolar m-plane GaN substrate, a Si-doped GaN layer, a multiplicity of InGaN/GaN layers, and and a Mg-doped GaN layer. A working temperature range of the solar cell is from room temperature to about 500° C., an external quantum efficiency of the solar cell increases by at least a factor of 2 from room temperature to 500° C., and a temperature coefficient of the solar cell is greater than zero up to 350° C.
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