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公开(公告)号：US20220336689A1
公开(公告)日：2022-10-20
申请号：US17856667
申请日：2022-07-01
发明人： Daniel Derkacs
IPC分类号： H01L31/0725 , H01L31/0735 , H01L31/18 , H01L31/054 , H01L31/0236
摘要： A multijunction solar cell includes an upper solar subcell, a bottom solar subcell adjacent to the upper solar subcell, a layer of light scattering elements below and directly adjacent to the bottom solar subcell, and a metallic layer disposed below and adjacent to the layer of light scattering elements.
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公开(公告)号：US20220293810A1
公开(公告)日：2022-09-15
申请号：US17664085
申请日：2022-05-19
IPC分类号： H01L31/0735 , H02S10/30 , H01L31/0725 , H01L31/18
摘要： The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
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公开(公告)号：US11430910B2
公开(公告)日：2022-08-30
申请号：US16074348
申请日：2017-02-01
申请人： Soitec
发明人： Cécile Aulnette , Frank Dimroth , Eduard Oliva
IPC分类号： H01L31/044 , H01L31/18 , H01L31/056 , H01L31/02 , H01L31/0735
摘要： An engineered substrate comprises: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm·cm2, preferably below 1 mOhm·cm2; and wherein a doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferably less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 1 mOhm·cm2.
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4.发明授权公开(公告)号：US11417788B2
公开(公告)日：2022-08-16
申请号：US12950912
申请日：2010-11-19
IPC分类号： H01L31/0693 , H01L31/0735 , H01L31/0304 , H01L31/0687 , H01L29/88
摘要： A type-II tunnel junction is disclosed that includes a p-doped AlGaInAs tunnel layer and a n-doped InP tunnel layer. Solar cells are further disclosed that incorporate the high bandgap type-II tunnel junction between photovoltaic subcells.
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公开(公告)号：US20220238742A1
公开(公告)日：2022-07-28
申请号：US17667194
申请日：2022-02-08
IPC分类号： H01L31/0725 , H01L31/18 , H01L31/0735 , H01L31/065
摘要： A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; and a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of its emitter layer and base layer.
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公开(公告)号：US20220238732A1
公开(公告)日：2022-07-28
申请号：US17611713
申请日：2020-05-26
发明人： Junya ISHIZAKI
IPC分类号： H01L31/02 , H01L31/0443 , H01L31/053 , H01L31/0735 , H01L31/18
摘要： A method for producing an electronic device having a drive circuit including a solar cell structure, the method including the steps of: having a first wafer having solar cell structures on a starting substrate and a second wafer having drive circuits formed, so that either one of the first wafer or the second wafer has a plurality of independent diode circuits and capacitor-function laminated portions; obtaining a bonded wafer by bonding so that the solar cell structures, the diode circuits, the capacitor-function laminated portions, and the drive circuits are superimposed; wiring; and dicing the bonded wafer; thus creating a method for producing an electronic device including a drive circuit, a solar cell structure, and a capacitor-function portion in one chip and having a suppressed production cost; and such an electronic device.
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公开(公告)号：US11374140B2
公开(公告)日：2022-06-28
申请号：US17373254
申请日：2021-07-12
IPC分类号： H01L31/0725 , H01L31/0735
摘要： A monolithic metamorphic multi-junction solar cell comprising a first III-V subcell and a second III-V subcell and a third III-V subcell and a fourth Ge subcell, wherein the subcells are stacked on top of each other in the indicated order, and the first subcell forms the topmost subcell, and a metamorphic buffer is formed between the third subcell and the fourth subcell and all subcells each have an n-doped emitter layer and a p-doped base layer, and the emitter layer of the second subcell is greater than the base layer.
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公开(公告)号：US11367802B2
公开(公告)日：2022-06-21
申请号：US16269848
申请日：2019-02-07
IPC分类号： H01L31/00 , H01L31/0735 , H02S10/30 , H01L31/0725 , H01L31/18
摘要： The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
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公开(公告)号：US20220013678A1
公开(公告)日：2022-01-13
申请号：US17373254
申请日：2021-07-12
IPC分类号： H01L31/0725 , H01L31/0735
摘要： A monolithic metamorphic multi-junction solar cell comprising a first III-V subcell and a second III-V subcell and a third III-V subcell and a fourth Ge subcell, wherein the subcells are stacked on top of each other in the indicated order, and the first subcell forms the topmost subcell, and a metamorphic buffer is formed between the third subcell and the fourth subcell and all subcells each have an n-doped emitter layer and a p-doped base layer, and the emitter layer of the second subcell is greater than the base layer.
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公开(公告)号：US20220013676A1
公开(公告)日：2022-01-13
申请号：US17373199
申请日：2021-07-12
IPC分类号： H01L31/0725 , H01L31/0735 , H01L31/074 , H01L31/043
摘要： A stacked monolithic multijunction solar cell, which includes a first subcell having a p-n junction with an emitter layer and a base layer, the thickness of the emitter layer being less than the thickness of the base layer at least by a factor of ten, and the first subcell comprising a substrate having a semiconductor material from the groups III and V or a substrate from the group IV, and which further includes a second subcell arranged on the first subcell and a third subcell arranged on the second subcell, the two subcells each including an emitter layer and a base layer, and a tunnel diode and a back side field layer each being formed between the subcells, the thickness of the emitter layer being greater than the thickness of the base layer in each case between the second subcell and in the third subcell.
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