- 专利标题： METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR
-
申请号： US16947616申请日： 2020-08-10
-
公开(公告)号： US20200373408A1公开(公告)日： 2020-11-26
- 发明人: Chun-Wei HSU , Jiun-Lei Jerry YU , Fu-Wei YAO , Chen-Ju YU , Fu-Chih YANG , Chun Lin TSAI
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/02 ; H01L29/10 ; H01L29/20 ; H01L29/417 ; H01L29/43 ; H01L29/778 ; H01L29/267
摘要：
A method of forming a high electron mobility transistor (HEMT) includes a first III-V compound layer and a second III-V compound layer disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A source feature and a drain feature are disposed on the second III-V compound layer. A p-type layer is disposed on a portion of the second III-V compound layer between the source feature and the drain feature. A gate electrode is disposed on the p-type layer. A capping layer is disposed on the second III-V compound layer.