Invention Application
- Patent Title: SEMICONDUCTOR PROCESS VARIATION DETECTOR
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Application No.: US16927558Application Date: 2020-07-13
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Publication No.: US20210013805A1Publication Date: 2021-01-14
- Inventor: Robert Allan NEIDORFF , Saurav BANDYOPADHYAY , Ramanathan RAMANI
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Main IPC: H02M3/158
- IPC: H02M3/158 ; H02M3/157 ; H02M1/08

Abstract:
In some examples, a system includes a voltage source terminal, a voltage reference terminal, a field effect transistor (FET), a current source, a comparator, and adjustment circuitry. The FET has a gate terminal and a non-gate terminal, the gate terminal coupled to the voltage source terminal. The current source is coupled to the non-gate terminal. The comparator has a comparator output and first and second comparator inputs, the first comparator input coupled to the non-gate terminal, and the second comparator input coupled to the voltage reference terminal. The adjustment circuitry has a circuitry input and a circuitry output, the circuitry input coupled to the comparator output, and the adjustment circuitry configured to adjust the circuitry output responsive to the circuitry input, in which the adjustment reduces a drive strength of the circuit.
Public/Granted literature
- US11476760B2 Semiconductor process variation detector Public/Granted day:2022-10-18
Information query
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