- 专利标题： GERMANIUM MEDIATED DE-OXIDATION OF SILICON
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申请号： US16791948申请日： 2020-02-14
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公开(公告)号： US20210028015A1公开(公告)日： 2021-01-28
- 发明人: Yong Liang , Vimal Kumar Kamineni
- 申请人： PsiQuantum Corp.
- 申请人地址： US CA Palo Alto
- 专利权人： PsiQuantum Corp.
- 当前专利权人： PsiQuantum Corp.
- 当前专利权人地址： US CA Palo Alto
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/28
摘要：
A method for removing a native oxide film from a semiconductor substrate includes repetitively depositing layers of germanium on the native oxide and heating the substrate causing the layer of germanium to form germanium oxide, desorbing a portion of the native oxide film. The process is repeated until the oxide film is removed. A subsequent layer of strontium titanate can be deposited on the semiconductor substrate, over either residual germanium or a deposited germanium layer. The germanium can be converted to silicon germanium oxide by exposing the strontium titanate to oxygen.
公开/授权文献
- US11302528B2 Germanium mediated de-oxidation of silicon 公开/授权日：2022-04-12
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