A nonvolatile memory device with improved operation performance and reliability, and a method for fabricating the same are provided. The nonvolatile memory device includes a substrate, a peripheral circuit structure on the substrate, a mold structure including a plurality of insulating patterns and a plurality of gate electrodes stacked alternately on the peripheral circuit structure, a channel structure penetrating the mold structure, a first impurity pattern in contact with first portions of the channel structure and having a first conductivity type, on the mold structure, and a second impurity pattern in contact with second portions of the channel structure and having a second conductivity type different from the first conductivity type, on the mold structure.