Invention Application
- Patent Title: MAGNETIC ELEMENT, MAGNETIC MEMORY DEVICE, AND MAGNETIC SENSOR
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Application No.: US16498936Application Date: 2018-02-15
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Publication No.: US20210036217A1Publication Date: 2021-02-04
- Inventor: Takayuki NOZAKI , Shinji YUASA , Rachwal Anna KOZIOL , Masahito TSUJIKAWA , Masafumi SHIRAI , Kazuhiro HONO , Tadakatsu OHKUBO , Xiandong XU
- Applicant: National Institute of Advanced Industrial Science and Technology , TOHOKU UNIVERSITY , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Applicant Address: JP Chiyoda-ku,Tokyo; JP Sendai-shi, Miyagi; JP Tsukuba-shi, Ibaraki
- Assignee: National Institute of Advanced Industrial Science and Technology,TOHOKU UNIVERSITY,NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee: National Institute of Advanced Industrial Science and Technology,TOHOKU UNIVERSITY,NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee Address: JP Chiyoda-ku,Tokyo; JP Sendai-shi, Miyagi; JP Tsukuba-shi, Ibaraki
- Priority: JP2017-067235 20170330
- International Application: PCT/JP2018/005290 WO 20180215
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L29/82 ; H01F10/14 ; H01F10/30 ; H01L27/22
Abstract:
According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.
Public/Granted literature
- US11133459B2 Magnetic element, magnetic memory device, and magnetic sensor Public/Granted day:2021-09-28
Information query
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