公开(公告)号：US11563170B2

公开(公告)日：2023-01-24

申请号：US16728414

申请日：2019-12-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jian Zhu ,  Guenole Jan ,  Yuan-Jen Lee ,  Huanlong Liu ,  Ru-Ying Tong ,  Po-Kang Wang

IPC分类号： H01L43/08 ,  H01F10/30 ,  H01F10/32 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01F10/16

摘要： A laminated seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sequentially sputter depositing a first seed layer, a first amorphous layer, a second seed layer, and a second amorphous layer where each seed layer may be Mg and has a resputtering rate 2 to 30X that of the amorphous layers that are TaN, SiN, or a CoFeM alloy. A template layer that is NiCr or NiFeCr is formed on the second amorphous layer. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The laminated seed layer stack may include a bottommost Ta or TaN buffer layer.

公开(公告)号：US20220351885A1

公开(公告)日：2022-11-03

申请号：US17682478

申请日：2022-02-28

申请人： HRL Laboratories, LLC

发明人： Shanying CUI ,  Xin N. GUAN ,  Adam F. GROSS ,  Florian G. HERRAULT

IPC分类号： H01F1/34 ,  H01F41/24 ,  H01F10/20 ,  H01F10/28 ,  H01F10/30

摘要： Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500° C. or less, such as 250° C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFe12O19) and/or strontium hexaferrite (SrFe12O19). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.

公开(公告)号：US11422211B2

公开(公告)日：2022-08-23

申请号：US17148686

申请日：2021-01-14

申请人： TDK CORPORATION

发明人： Kazuumi Inubushi ,  Katsuyuki Nakada

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  G11C11/16 ,  H01F10/193 ,  H01F10/30 ,  G01R33/12

摘要： A stacked structure is positioned on a nonmagnetic metal layer. The stacked structure includes a ferromagnetic layer and an intermediate layer interposed between the nonmagnetic metal layer and the ferromagnetic layer. The intermediate layer includes a NiAlX alloy layer represented by Formula (1): Niγ1Alγ2Xγ3 . . . (1), [X indicates one or more elements selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and satisfies an expression of 0

公开(公告)号：US20220208421A1

公开(公告)日：2022-06-30

申请号：US17206441

申请日：2021-03-19

申请人： Chapman University

发明人： Armen Gulian ,  Rajendra Dulal ,  Yasushi Kawashima ,  Serafim Teknowijoyo ,  Sara Chahid

IPC分类号： H01F1/00 ,  H01F10/28 ,  H01F10/30 ,  H01F10/14 ,  H01F41/22

摘要： Systems, methods, and apparatus for generating an ideal diamagnetic response are disclosed. A disclosed diamagnetic system includes a metal foil or a first substrate having at least one surface that is coated by a metallic layer (e.g., permalloy). The diamagnetic system also includes a second substrate having at least one surface that is coated by graphene. The first and second substrates are immersed in an alkane (e.g., n-heptane). The diamagnetic system produces a diamagnetic response at room temperature in an applied magnetic field when the alkane is added to surround the permalloy and graphene.

公开(公告)号：US11367551B2

公开(公告)日：2022-06-21

申请号：US16954983

申请日：2018-12-14

申请人： Montana State University ,  The Regents of The University of California

发明人： Ryan J. Snow ,  Yves U. Idzerda ,  Elke Arenholz

IPC分类号： H01F10/14 ,  H01F10/16 ,  H01F10/30 ,  H01F41/32 ,  G11B5/65 ,  G11C11/14 ,  G11B5/73 ,  G01R33/09 ,  G11C11/16 ,  G11B5/82 ,  G01R33/00

摘要： Large magnetic moment compositions are formed by stabilizing ternary or other alloys with a epitaxial control layer. Compositions that are unstable in bulk specimen are thus stabilized and exhibit magnetic moments that are greater that a Slater-Pauling limit. In one example, FexCoyMnz layers are produced on an MgO(001) substrate with an MgO surface serving to control the structure of the FexCoyMnz layers. Magnetizations greater than 3 Bohr magnetons are produced.

公开(公告)号：US11316102B2

公开(公告)日：2022-04-26

申请号：US16865810

申请日：2020-05-04

申请人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

发明人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

IPC分类号： H01L43/10 ,  H01L43/08 ,  H01F10/12 ,  H01F10/32 ,  H01F10/30

摘要： The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

公开(公告)号：US11175358B2

公开(公告)日：2021-11-16

申请号：US16446296

申请日：2019-06-19

申请人： MagArray, Inc.

发明人： Shan Xiang Wang ,  Sebastian J. Osterfeld

IPC分类号： G01R33/09 ,  H01F10/32 ,  H01F10/30 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10

摘要： Aspects of the present disclosure include magnetic sensor devices having a mixed oxide passivation layer. Magnetic sensor devices according to certain embodiments include a magnetic sensor element and a passivation layer having two or more of zirconium oxide, aluminum oxide and tantalum oxide. Also provided are magnetic sensor devices having an encapsulating passivation layer. Magnetic sensor devices according to certain embodiments include a substrate, a magnetic sensor element and a passivation layer that encapsulates the magnetic sensor element. Methods for making a magnetic sensor with a passivation layer are described. Methods and systems for detecting one or more analytes in a sample are also described. Aspects further include kits having one or more of the subject magnetic sensor devices and a magnetic label.

公开(公告)号：US11169402B2

公开(公告)日：2021-11-09

申请号：US16502514

申请日：2019-07-03

申请人： University of Electronic Science and Technology of China

发明人： Lichuan Jin ,  Kancheng Jia ,  Dainan Zhang ,  Huaiwu Zhang ,  Zhiyong Zhong ,  Qinghui Yang ,  Xiaoli Tang ,  Feiming Bai

IPC分类号： G11B11/105 ,  H01F10/32 ,  H01F41/32 ,  H01F10/30 ,  H01F10/28 ,  G02F1/09 ,  C23C14/08 ,  C23C14/28 ,  C30B23/02 ,  C30B29/46

摘要： The present invention relates to the technical field of superlattice magneto-optical material technologies, and in particular, to a superlattice material, and a preparation method and application thereof. According to description of embodiments, the superlattice material provided in the present invention has both a relatively good magnetic property of a ferrous garnet material and a good photoelectric absorption characteristic of a two-dimensional semiconductor material such as graphene. Magneto-optical Kerr effect data obtained through testing shows that: A saturated magneto-optical Kerr angle of the superlattice material in the present invention is 13 mdeg in a magnetic field of 2500 Oe, and a magneto-optical Kerr angle of the superlattice material is increased by 2.5 times compared with a nonsuperlattice ferrimagnetic thin film material into which no two-dimensional material is inserted, thereby achieving magneto-optical effect enhancement.

公开(公告)号：US20210305171A1

公开(公告)日：2021-09-30

申请号：US17205098

申请日：2021-03-18

申请人： Shibaura Mechatronics Corporation

发明人： Hisashi NISHIGAKI ,  Atsushi FUJITA ,  Shohei TANABE ,  Yoshinao KAMO ,  Shigeki MATSUNAKA

IPC分类号： H01L23/552 ,  H01F10/26 ,  H01F10/30 ,  H05K9/00 ,  H01L23/00

摘要： According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

公开(公告)号：US11011474B2

公开(公告)日：2021-05-18

申请号：US16562652

申请日：2019-09-06

申请人： KABUSHIKI KAISHA TOSHIBA ,  SHIBAURA MECHATRONICS CORPORATION

发明人： Akira Kikitsu ,  Yoshinari Kurosaki ,  Kenichiro Yamada ,  Shigeki Matsunaka

IPC分类号： H01L23/552 ,  H01F10/30 ,  H01F10/14 ,  H01F10/16

摘要： According to one embodiment, an electromagnetic wave attenuator includes a plurality of magnetic layers, and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A first thickness along the first direction of the one of the plurality of magnetic layers is not less than ½ times a second thickness along the first direction of the one of the plurality of nonmagnetic layers.