- 专利标题: ROW HAMMER PREVENTION CIRCUIT, A MEMORY MODULE INCLUDING THE ROW HAMMER PREVENTION CIRCUIT, AND A MEMORY SYSTEM INCLUDING THE MEMORY MODULE
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申请号: US16858468申请日: 2020-04-24
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公开(公告)号: US20210043248A1公开(公告)日: 2021-02-11
- 发明人: Eojin LEE , Ingab KANG , Jung Ho AHN
- 申请人: SK hynix Inc. , Seoul National University R&DB Foundation
- 申请人地址: KR Icheon; KR Seoul
- 专利权人: SK hynix Inc.,Seoul National University R&DB Foundation
- 当前专利权人: SK hynix Inc.,Seoul National University R&DB Foundation
- 当前专利权人地址: KR Icheon; KR Seoul
- 优先权: KR10-2019-0095516 20190806
- 主分类号: G11C11/406
- IPC分类号: G11C11/406 ; G11C11/4076 ; G11C11/4072 ; G11C11/408 ; G11C11/409
摘要:
A row hammer prevention circuit for providing a reference address to perform an additional refresh operation includes a history storage circuit configured to store one or more first addresses, each of the first addresses having been provided as the reference address. The row hammer prevention circuit further includes an address storage circuit configured to store a row address corresponding to an active command, a reference address storage circuit configured to store one or more second addresses, and a control circuit configured to provide the reference address in response to a refresh command.
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