A quantum dot light emitting diode (QLED) device and a manufacturing method thereof are provided. The QLED device includes a quantum dot light emitting layer, a first electrode, and an electron transport layer between the quantum dot light emitting layer and the first electrode. The electron transport layer has multiple electron transport sub-layers. For any two electron transport sub-layers among the multiple electron transport sub-layers, a lowest unoccupied molecular orbital (LUMO) energy level of one electron transport sub-layer close to the quantum dot light emitting layer is higher than an LUMO energy level of another electron transport sub-layer far away from the quantum dot light emitting layer, and an LUMO energy level of each of the multiple electron transport sub-layers is lower than an LUMO energy level of the quantum dot light emitting layer and higher than a work function of the first electrode.