- 专利标题： RESISTIVE SWITCHING MEMORY DEVICE BASED ON MULTI-INPUTS
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申请号： US16932029申请日： 2020-07-17
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公开(公告)号： US20210050514A1公开(公告)日： 2021-02-18
- 发明人: Ki Tae NAM , Ouk Hyun CHO , Jang-Yeon KWON , Min-Kyu SONG , Seok NAMGUNG , Hyeohn KIM , Yoon Ho LEE
- 申请人： YONSEI UNIVERSITY, UNIVERSITY - INDUSTRY FOUNDATION (UIF) , Seoul National University R&DB Foundation
- 申请人地址： KR Seoul; KR Seoul
- 专利权人： YONSEI UNIVERSITY, UNIVERSITY - INDUSTRY FOUNDATION (UIF),Seoul National University R&DB Foundation
- 当前专利权人： YONSEI UNIVERSITY, UNIVERSITY - INDUSTRY FOUNDATION (UIF),Seoul National University R&DB Foundation
- 当前专利权人地址： KR Seoul; KR Seoul
- 优先权： KR10-2019-0100119 20190816,KR10-2020-0018954 20200217
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A resistive switching memory device according to an exemplary embodiment includes: a first electrode; a second electrode formed to be separated from the first electrode; and an insulating layer formed near the first electrode and the second electrode, and changed to one of a high resistance state and a low resistance state when a conductive filament is controlled by a change of external humidity or a voltage applied through the first electrode or the second electrode.
公开/授权文献
- US11437570B2 Resistive switching memory device based on multi-inputs 公开/授权日：2022-09-06
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