- 专利标题: ROOT CAUSE ANALYSIS FOR FABRICATION PROCESSES OF SEMICONDUCTOR STRUCTURES
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申请号: US17034640申请日: 2020-09-28
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公开(公告)号: US20210097673A1公开(公告)日: 2021-04-01
- 发明人: Jens Timo Neumann , Eugen Foca , Ramani Pichumani , Abhilash Srikantha , Christian Wojek , Thomas Korb , Joaquin Correa
- 申请人: Carl Zeiss SMT GmbH
- 申请人地址: DE Oberkochen
- 专利权人: Carl Zeiss SMT GmbH
- 当前专利权人: Carl Zeiss SMT GmbH
- 当前专利权人地址: DE Oberkochen
- 主分类号: G06T7/00
- IPC分类号: G06T7/00 ; H01L21/66
摘要:
A method includes obtaining at least one 2-D image dataset of semiconductor structures formed on a wafer including one or more defects during a wafer run of a wafer using a predefined fabrication process. The method also includes determining, based on at least one machine-learning algorithm trained on prior knowledge of the fabrication process and based on the at least one 2-D image dataset, one or more process deviations of the wafer run from the predefined fabrication process as a root cause of the one or more defects. A 3-D image dataset may be determined as a hidden variable.
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