Invention Application
- Patent Title: VERTICAL RESISTIVE RANDOM ACCESS MEMORY
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Application No.: US16585216Application Date: 2019-09-27
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Publication No.: US20210098533A1Publication Date: 2021-04-01
- Inventor: Bin YANG , Xia LI , Gengming TAO
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00
Abstract:
Certain aspects of the present disclosure generally relate to a vertical resistive random access memory (RRAM). The vertical RRAM generally includes a planar substrate layer and a plurality of fin-like metal-insulator-metal (MIM) structures extending orthogonally above the substrate layer.
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