METHODS OF SELECTIVELY FORMING N-TYPE DOPED MATERIAL ON A SURFACE, SYSTEMS FOR SELECTIVELY FORMING N-TYPE DOPED MATERIAL, AND STRUCTURES FORMED USING SAME

Invention Application

US20210125827A1 METHODS OF SELECTIVELY FORMING N-TYPE DOPED MATERIAL ON A SURFACE, SYSTEMS FOR SELECTIVELY FORMING N-TYPE DOPED MATERIAL, AND STRUCTURES FORMED USING SAME 有权

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Patent Title: METHODS OF SELECTIVELY FORMING N-TYPE DOPED MATERIAL ON A SURFACE, SYSTEMS FOR SELECTIVELY FORMING N-TYPE DOPED MATERIAL, AND STRUCTURES FORMED USING SAME
Application No.: US17071149

Application Date: 2020-10-15
Publication No.: US20210125827A1

Publication Date: 2021-04-29
Inventor: Rami Khazaka , Lucas Petersen Barbosa Lima , Giuseppe Alessio Verni , Qi Xie
Applicant: ASM IP Holding B.V.
Applicant Address: NL Almere
Assignee: ASM IP Holding B.V.
Current Assignee: ASM IP Holding B.V.
Current Assignee Address: NL Almere
Main IPC: H01L21/02
IPC: H01L21/02 ; H01L21/306 ; H01L21/67 ; C23C16/52 ; H01L29/36

METHODS OF SELECTIVELY FORMING N-TYPE DOPED MATERIAL ON A SURFACE, SYSTEMS FOR SELECTIVELY FORMING N-TYPE DOPED MATERIAL, AND STRUCTURES FORMED USING SAME

Abstract:

A method for selectively forming an n-type doped material on a surface of a substrate is disclosed. A system for performing the method and structures and devices formed using the method are also disclosed.

Public/Granted literature

US11646205B2 Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same Public/Granted day:2023-05-09

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理