Invention Application
- Patent Title: TEMPERATURE CONTROLLED SECONDARY ELECTRODE FOR ION CONTROL AT SUBSTRATE EDGE
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Application No.: US16674982Application Date: 2019-11-05
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Publication No.: US20210134554A1Publication Date: 2021-05-06
- Inventor: HAMID NOORBAKHSH , KARTIK RAMASWAMY , ANWAR HUSAIN
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01J37/04
- IPC: H01J37/04 ; H01L21/683 ; H01J37/32

Abstract:
Embodiments of process kits for use in substrate processing chambers are provided herein. In some embodiments, a process kit for use in a substrate processing chamber includes an annular electrode configured to surround an electrostatic chuck, wherein the annular electrode includes an upper portion bonded to a lower portion and an annular channel disposed at an interface between the upper portion and the lower portion; wherein the annular electrode includes a first channel extending from a lower surface of the lower portion to the annular channel and a second channel extending from the lower surface of the lower portion to the annular channel; wherein the annular electrode is configured to flow a coolant from the first channel to the second channel via the annular channel to cool the annular electrode; and wherein the annular electrode includes at least one of a dielectric coating or a ceramic cap to reduce or prevent arcing between the annular electrode and the electrostatic chuck.
Public/Granted literature
- US11424096B2 Temperature controlled secondary electrode for ion control at substrate edge Public/Granted day:2022-08-23
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