Invention Application
- Patent Title: SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME
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Application No.: US17021166Application Date: 2020-09-15
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Publication No.: US20210151300A1Publication Date: 2021-05-20
- Inventor: Jieun JUNG , Siqing LU , Soonam PARK , Kyuhee HAN
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2019-0149877 20191120
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A substrate processing apparatus and a method of manufacturing a semiconductor device, the apparatus including a plasma region in which plasma is generated; a processing region in which a substrate is processable; a shower head including a first channel and a second channel, the first channel being a passage through which the plasma flows between the plasma region and the processing region and the second channel being a passage through which a process gas is supplied to the processing region, the first channel and the second channel being separated from each other; a substrate support supporting the substrate in the processing region; and a cooler configured to supply a cooling fluid to a cooling channel of the substrate support.
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