- 专利标题： NANOSHEET (NS) AND FIN FIELD-EFFECT TRANSISTOR (FINFET) HYBRID INTEGRATION
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申请号： US16712222申请日： 2019-12-12
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公开(公告)号： US20210183852A1公开(公告)日： 2021-06-17
- 发明人: Xia LI , Haining YANG , Bin YANG
- 申请人： QUALCOMM Incorporated
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L29/04 ; H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L21/762 ; H01L21/8238
摘要：
Certain aspects of the present disclosure are directed to a semiconductor device. The semiconductor device generally includes a substrate, at least one silicon-on-insulator (SOI) transistor disposed above the substrate, a gate-all-around (GAA) transistor disposed above the substrate, and a fin field-effect transistor (FinFET) disposed above the substrate.
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