- 专利标题： SYNTHESIS AND USE OF PRECURSORS FOR VAPOR DEPOSITION OF TUNGSTEN CONTAINING THIN FILMS
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申请号： US17302276申请日： 2021-04-29
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公开(公告)号： US20210246095A1公开(公告)日： 2021-08-12
- 发明人: Timo Hatanpää , Miika Mattinen , Mikko Ritala , Markku Leskelä
- 申请人： ASM IP Holding B.V.
- 申请人地址： NL Almere
- 专利权人： ASM IP Holding B.V.
- 当前专利权人： ASM IP Holding B.V.
- 当前专利权人地址： NL Almere
- 主分类号： C07C49/92
- IPC分类号： C07C49/92 ; C07C45/77 ; C23C16/30 ; C23C16/455
摘要：
Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.
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