- 专利标题: SEMICONDUCTOR DEVICE STRUCTURE WITH MAGNETIC ELEMENT
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申请号: US17328801申请日: 2021-05-24
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公开(公告)号: US20210280477A1公开(公告)日: 2021-09-09
- 发明人: Mill-Jer WANG , Tang-Jung CHIU , Chi-Chang LAI , Chia-Heng TSAI , Mirng-Ji LII , Weii LIAO
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L21/66
- IPC分类号: H01L21/66 ; H01L23/552 ; H01L27/01
摘要:
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first magnetic element and a second magnetic element over the semiconductor substrate. The semiconductor device structure also includes a first conductive line extending exceeding an edge of the first magnetic element. The semiconductor device structure further includes a second conductive line extending exceeding an edge of the second magnetic element. The second conductive line is electrically connected to the first conductive line.
公开/授权文献
- US11631621B2 Semiconductor device structure with magnetic element 公开/授权日:2023-04-18