- 专利标题： Integrated Circuitry, Memory Arrays Comprising Strings Of Memory Cells, Methods Used In Forming Integrated Circuitry, And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
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申请号： US16814750申请日： 2020-03-10
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公开(公告)号： US20210287943A1公开(公告)日： 2021-09-16
- 发明人: Corey Staller , Anilkumar Chandolu
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L27/11556 ; H01L27/11582
摘要：
A method used in forming integrated circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers. A stair-step structure is formed into the stack. A first liquid is applied onto the stair-step structure. The first liquid comprises insulative physical objects that individually have at least one of a maximum submicron dimension or a minimum submicron dimension. The first liquid is removed to leave the insulative physical objects touching one another and to have void-spaces among the touching insulative physical objects. A second liquid that is different from the first liquid is applied into the void-spaces. The second liquid is changed into a solid insulative material in the void-spaces. Other embodiments, including structure, are disclosed.
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