- 专利标题: FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE
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申请号: US17338292申请日: 2021-06-03
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公开(公告)号: US20210296257A1公开(公告)日: 2021-09-23
- 发明人: Chin-Shan WANG , Shun-Yi LEE
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L23/552
- IPC分类号: H01L23/552 ; H01L21/762 ; H01L23/58
摘要:
A method includes forming parallel first and second dummy materials in an alternating manner. The method further includes etching portions of the first and second dummy materials, using respective selective etches, to form a plurality of gaps. The method further includes filling a first gap of the plurality of gaps with a dielectric material. The method further includes filling a second gap of the plurality of gaps with a conductive material.