公开(公告)号：US20190139903A1

公开(公告)日：2019-05-09

申请号：US16222355

申请日：2018-12-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chin-Shan WANG ,  Shun-Yi LEE

IPC分类号： H01L23/552 ,  H01L21/762 ,  H01L23/58

摘要： A semiconductor structure includes a semiconductor strip in a seal ring area. The semiconductor structure further includes a dielectric structure extending into the semiconductor strip, wherein a plurality of metal structures and a plurality of via structures stack over the dielectric structure to form a seal ring structure.

公开(公告)号：US20180006017A1

公开(公告)日：2018-01-04

申请号：US15255394

申请日：2016-09-02

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chin-Shan WANG ,  Shun-Yi LEE

IPC分类号： H01L27/06 ,  H01L49/02 ,  H01L23/535 ,  H01L21/8234 ,  H01L21/822 ,  H01L29/06 ,  H01L21/768

CPC分类号： H01L27/0629 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/8221 ,  H01L21/8234 ,  H01L23/5283 ,  H01L23/535 ,  H01L28/24 ,  H01L29/0649

摘要： A semiconductor device includes an interconnect layer on an inter-layer dielectric (ILD) structure. The ILD structure includes: first contacts, extending through the ILD structure, electrically connected to corresponding first components located in a floor structure underlying the ILD structure; at least one second component located within the ILD structure and spaced from a surface of the ILD structure (in a direction perpendicular to a plane of the ILD structure) a distance which is less than a thickness of the ILD structure; and second contacts directly contacting corresponding first regions of the at least one second component. The interconnect layer includes: first metallization segments which directly contact corresponding ones of the first contacts; and second metallization segments located over a second region of the at least one second component, a width of the second metallization segments being less than a width of the first metallization segments.

公开(公告)号：US20210343723A1

公开(公告)日：2021-11-04

申请号：US17370673

申请日：2021-07-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chin-Shan WANG ,  Shun-Yi LEE

IPC分类号： H01L27/108

摘要： A method of making a semiconductor device includes forming a first transistor on a substrate, wherein forming the first transistor comprises forming a first source/drain electrode in the substrate. The method further includes forming a second transistor on the substrate, wherein forming the second transistor comprises forming a second source/drain electrode. The method further includes forming an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode, a top surface of the insulating layer is above a top surface of the substrate.

公开(公告)号：US20210296257A1

公开(公告)日：2021-09-23

申请号：US17338292

申请日：2021-06-03

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chin-Shan WANG ,  Shun-Yi LEE

IPC分类号： H01L23/552 ,  H01L21/762 ,  H01L23/58

摘要： A method includes forming parallel first and second dummy materials in an alternating manner. The method further includes etching portions of the first and second dummy materials, using respective selective etches, to form a plurality of gaps. The method further includes filling a first gap of the plurality of gaps with a dielectric material. The method further includes filling a second gap of the plurality of gaps with a conductive material.

公开(公告)号：US20180151570A1

公开(公告)日：2018-05-31

申请号：US15881391

申请日：2018-01-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chin-Shan WANG ,  Shun-Yi LEE

IPC分类号： H01L27/108

CPC分类号： H01L27/10832 ,  H01L21/823878 ,  H01L27/10826 ,  H01L27/1085 ,  H01L27/1087 ,  H01L27/10879 ,  H01L27/10891

摘要： A semiconductor device includes a substrate. The semiconductor device further includes a first transistor on the substrate, wherein the first transistor includes a first source/drain electrode. The semiconductor device further includes a second transistor on the substrate, wherein the second transistor includes a second source/drain electrode. The semiconductor device further includes an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode.

公开(公告)号：US20170345769A1

公开(公告)日：2017-11-30

申请号：US15255350

申请日：2016-09-02

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chin-Shan WANG ,  Shun-Yi LEE

IPC分类号： H01L23/552 ,  H01L23/58

CPC分类号： H01L23/552 ,  H01L21/76224 ,  H01L23/585

摘要： A method of fabricating a semiconductor structure. The method includes forming a dummy structure over a semiconductor body. The method further includes depositing an inter-layer dielectric (ILD) over the semiconductor body. The method further includes removing a dummy material of the dummy structure to form an opening in the ILD. The method further includes filling the opening with a dielectric material to form a dielectric structure. The method further includes stacking a plurality of interconnect elements over the dielectric structure.

公开(公告)号：US20200035684A1

公开(公告)日：2020-01-30

申请号：US16593164

申请日：2019-10-04

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chin-Shan WANG ,  Shun-Yi LEE

IPC分类号： H01L27/108

摘要： A semiconductor device includes a substrate. The semiconductor device further includes a first transistor on the substrate, wherein the first transistor includes a first source/drain electrode in the substrate. The semiconductor device further includes a second transistor on the substrate, wherein the second transistor includes a second source/drain electrode. The semiconductor device further includes an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode, a top surface of the insulating layer is above a top surface of the substrate, and a sidewall of the insulating layer above the substrate is aligned with a sidewall of the insulating layer within the substrate.

公开(公告)号：US20170358584A1

公开(公告)日：2017-12-14

申请号：US15178903

申请日：2016-06-10

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chin-Shan WANG ,  Shun-Yi LEE

IPC分类号： H01L27/108

CPC分类号： H01L27/10832 ,  H01L27/10826 ,  H01L27/1085 ,  H01L27/1087 ,  H01L27/10879 ,  H01L27/10891

摘要： A method of fabricating a semiconductor device. The method includes forming a dummy structure over a substrate, forming conductive features on opposite sides of the dummy gate structure, removing the dummy structure and a portion of the substrate beneath the dummy gate structure to form a trench, and filling the trench with a dielectric material.