- 专利标题： THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR AND THE DISPLAY DEVICE
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申请号： US17348188申请日： 2021-06-15
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公开(公告)号： US20210313474A1公开(公告)日： 2021-10-07
- 发明人: Kohei Ebisuno , Sungjun Kim , Donghyun Son , Jaesoo Jung , Sunghoon Moon , Jingoo Jung
- 申请人： SAMSUNG DISPLAY CO., LTD.
- 申请人地址： KR Yongin-Si
- 专利权人： SAMSUNG DISPLAY CO., LTD.
- 当前专利权人： SAMSUNG DISPLAY CO., LTD.
- 当前专利权人地址： KR Yongin-Si
- 优先权： KR10-2018-0156282 20181206
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L27/32 ; H01L27/12 ; H01L21/02 ; H01L21/306 ; H01L29/66
摘要：
A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.
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