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公开(公告)号：US11900869B2
公开(公告)日：2024-02-13
申请号：US18084416
申请日：2022-12-19
发明人： Soo-Young Jung , Sungjun Kim
IPC分类号： G06F1/16 , G09G3/3208
CPC分类号： G09G3/3208 , G06F1/1601
摘要： A display device includes: a base layer comprising a display area and a non-display area surrounding at least a portion of the display area; an insulating layer on the base layer and having an engraved pattern formed by removing at least a portion thereof in a thickness direction to overlap the non-display area; a light emitting element overlapping the display area and on the base layer; and an organic layer overlapping the display area and the non-display area, covering at least a portion of the engraved pattern, and on the light emitting element, wherein the engraved pattern comprises an extension portion extending in an extension direction along one side of the display area and protruding portions protruding from the extension portion to a cross direction away from the display area and spaced apart from each other.
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公开(公告)号：US11063155B2
公开(公告)日：2021-07-13
申请号：US16414266
申请日：2019-05-16
发明人： Kohei Ebisuno , Sungjun Kim , Donghyun Son , Jaesoo Jung , Sunghoon Moon , Jingoo Jung
IPC分类号： H01L29/786 , H01L27/32 , H01L27/12 , H01L21/02 , H01L21/306 , H01L29/66
摘要： A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.
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公开(公告)号：US20230217687A1
公开(公告)日：2023-07-06
申请号：US18090500
申请日：2022-12-29
发明人： Sooyoung Jung , Sungjun Kim
IPC分类号： H10K50/844 , H10K50/858
CPC分类号： H10K50/844 , H10K50/858
摘要： Provided is a display apparatus comprising: a display substrate including a substrate and a display element disposed over the substrate; and an encapsulation layer disposed over the display substrate and including an inorganic encapsulation layer and an organic encapsulation layer, the inorganic encapsulation layer shielding the display element, wherein a control groove configured to control a position of an end of the organic encapsulation layer is provided in at least one of the inorganic encapsulation layer and an upper surface of the display substrate, wherein the end of the organic encapsulation layer does not overlap the control groove, or the organic encapsulation layer overlaps only a portion of the control groove.
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公开(公告)号：US20200185537A1
公开(公告)日：2020-06-11
申请号：US16414266
申请日：2019-05-16
发明人： KOHEI EBISUNO , Sungjun Kim , Donghyun Son , Jaesoo Jung , Sunghoon Moon , Jingoo Jung
IPC分类号： H01L29/786 , H01L27/32 , H01L27/12 , H01L21/02 , H01L21/306 , H01L29/66
摘要： A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.
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公开(公告)号：US11563126B2
公开(公告)日：2023-01-24
申请号：US17348188
申请日：2021-06-15
发明人： Kohei Ebisuno , Sungjun Kim , Donghyun Son , Jaesoo Jung , Sunghoon Moon , Jingoo Jung
IPC分类号： H01L29/786 , H01L27/32 , H01L27/12 , H01L21/02 , H01L21/306 , H01L29/66
摘要： A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.
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公开(公告)号：US20210313474A1
公开(公告)日：2021-10-07
申请号：US17348188
申请日：2021-06-15
发明人： Kohei Ebisuno , Sungjun Kim , Donghyun Son , Jaesoo Jung , Sunghoon Moon , Jingoo Jung
IPC分类号： H01L29/786 , H01L27/32 , H01L27/12 , H01L21/02 , H01L21/306 , H01L29/66
摘要： A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.
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