- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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申请号: US17099994申请日: 2020-11-17
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公开(公告)号: US20210375896A1公开(公告)日: 2021-12-02
- 发明人: Kyoung-Hee KIM , Woo Choel NOH , Ik Soo KIM , Jun Kwan KIM , Jinsub KIM , Yongjin SHIN
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2020-0064170 20200528
- 主分类号: H01L27/11539
- IPC分类号: H01L27/11539 ; H01L27/11519 ; H01L27/11551 ; H01L27/11565 ; H01L27/11573 ; H01L27/11578
摘要:
A semiconductor device including a substrate that includes a cell array region and a peripheral circuit region; a cell transistor on the cell array region of the substrate; a peripheral transistor on the peripheral circuit region of the substrate; a first interconnection layer connected to the cell transistor; a second interconnection layer connected to the peripheral transistor; an interlayer dielectric layer covering the first interconnection layer; and a blocking layer spaced apart from the first interconnection layer, the blocking layer covering a top surface and a sidewall of the second interconnection layer.
公开/授权文献
- US11563017B2 Semiconductor device and method of fabricating the same 公开/授权日:2023-01-24
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