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公开(公告)号：US20210292900A1
公开(公告)日：2021-09-23
申请号：US17333820
申请日：2021-05-28
发明人： Soyoung LEE , Hyunjae LEE , Ik Soo KIM , Jang-Hee LEE
IPC分类号： C23C16/455 , H01L21/02 , C23C16/44 , C23C16/448
摘要： Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.
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公开(公告)号：US20210375896A1
公开(公告)日：2021-12-02
申请号：US17099994
申请日：2020-11-17
发明人： Kyoung-Hee KIM , Woo Choel NOH , Ik Soo KIM , Jun Kwan KIM , Jinsub KIM , Yongjin SHIN
IPC分类号： H01L27/11539 , H01L27/11519 , H01L27/11551 , H01L27/11565 , H01L27/11573 , H01L27/11578
摘要： A semiconductor device including a substrate that includes a cell array region and a peripheral circuit region; a cell transistor on the cell array region of the substrate; a peripheral transistor on the peripheral circuit region of the substrate; a first interconnection layer connected to the cell transistor; a second interconnection layer connected to the peripheral transistor; an interlayer dielectric layer covering the first interconnection layer; and a blocking layer spaced apart from the first interconnection layer, the blocking layer covering a top surface and a sidewall of the second interconnection layer.
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公开(公告)号：US20230180472A1
公开(公告)日：2023-06-08
申请号：US18097592
申请日：2023-01-17
发明人： Kyoung-Hee KIM , Woo Choel NOH , Ik Soo KIM , Jun Kwan KIM , Jinsub KIM , Yongjin SHIN
摘要： A semiconductor device including a substrate that includes a cell array region and a peripheral circuit region; a cell transistor on the cell array region of the substrate; a peripheral transistor on the peripheral circuit region of the substrate; a first interconnection layer connected to the cell transistor; a second interconnection layer connected to the peripheral transistor; an interlayer dielectric layer covering the first interconnection layer; and a blocking layer spaced apart from the first interconnection layer, the blocking layer covering a top surface and a sidewall of the second interconnection layer.
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4.发明公开公开(公告)号：US20230146542A1
公开(公告)日：2023-05-11
申请号：US17828580
申请日：2022-05-31
发明人： Min Jae OH , Ik Soo KIM , Sang Ho RHA , Ji Woon IM
IPC分类号： H01L27/108
CPC分类号： H01L27/10811 , H01L27/10885 , H01L27/10894
摘要： A semiconductor memory device includes a cell substrate, a mold structure including a plurality of gate electrodes stacked on the cell substrate, the gate electrodes including a first ground selection line, a second ground selection line and a plurality of word lines, which are sequentially stacked, a channel structure that extends in a vertical direction that crosses an upper surface of the cell substrate and penetrates the mold structure, a partial isolation region that extends in a first direction that is parallel with the upper surface of the cell substrate and partially separates the mold structure, and a ground isolation structure that connects two partial isolation regions adjacent to each other in the first direction, extends in the vertical direction and penetrates the first ground selection line and the second ground selection line, wherein a width of the ground isolation structure increases with distance from the cell substrate.
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公开(公告)号：US20220136108A1
公开(公告)日：2022-05-05
申请号：US17577204
申请日：2022-01-17
发明人： Byung-Sun PARK , Ik Soo KIM , Jiwoon IM , Sangho RHA , Minjae OH
IPC分类号： C23C16/455 , H01L21/67 , H01J37/32
摘要： A semiconductor manufacturing apparatus includes a chamber that includes a station in which a substrate is provided, a substrate holder that is in the station and receives the substrate, and lower showerheads below the substrate holder, the lower showerheads including an isotropic showerhead having first nozzle holes that isotropically provide a first reaction gas on a bottom surface of the substrate, and a striped showerhead having striped nozzle regions and striped blank regions between the striped nozzle regions, the striped nozzle regions having second nozzle holes that non-isotropically provide a second reaction gas on the bottom surface of the substrate.
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公开(公告)号：US20220115442A1
公开(公告)日：2022-04-14
申请号：US17348912
申请日：2021-06-16
发明人： Byeong Ju BAE , Seung-Heon LEE , Ik Soo KIM , Byoung Deog CHOI
摘要： A semiconductor memory device and associated methods, the device including first and second lower conductive lines extending in a first direction; a first middle conductive line on the first and second lower conductive lines and extending in a second direction; first and second memory cells between the first and second lower conductive lines and the first middle conductive line; an air gap support layer between the first and second memory cells; and a first air gap between the first and second memory cells and under the air gap support layer, wherein an upper surface of the air gap support layer lies in a same plane as the first and second memory cells, the first and second memory cells include first and second OTS layers and first and second phase-change layers, and the first air gap overlaps the first and second phase-change layers.
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公开(公告)号：US20210375877A1
公开(公告)日：2021-12-02
申请号：US17165539
申请日：2021-02-02
发明人： Jin Sub KIM , Jun Kwan KIM , Woo Choel NOH , Kyoung-Hee KIM , Ik Soo KIM , Yong Jin SHIN
IPC分类号： H01L27/108
摘要： A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric film extending on the lower electrode along a side surface of the lower electrode that is perpendicular to the substrate, an upper electrode on the capacitor dielectric film, an interface layer including a hydrogen blocking film and a hydrogen bypass film on the upper electrode, the hydrogen blocking film including a conductive material, and a contact plug penetrating the interface layer and electrically connected to the upper electrode.
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公开(公告)号：US20210328039A1
公开(公告)日：2021-10-21
申请号：US17112357
申请日：2020-12-04
发明人： Sun Hye LEE , Sung Soo KIM , Ik Soo KIM , Woong Sik NAM , Dong Hyun ROH
摘要： A semiconductor device includes first and second active patterns each extending in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction. A field insulating layer is disposed between the first active pattern and the second active pattern. A first gate structure is disposed on the first active pattern and extends in the second direction. An interlayer insulating layer is disposed between the first gate structure and the field insulating layer. The interlayer insulating layer includes a first part disposed below the first gate structure. A spacer is disposed between the first gate structure and the first part of the interlayer insulating layer.
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9.发明申请公开(公告)号：US20200325579A1
公开(公告)日：2020-10-15
申请号：US16750557
申请日：2020-01-23
发明人： Byung-Sun PARK , Ik Soo KIM , Jiwoon IM , Sangho RHA , Minjae OH
IPC分类号： C23C16/455 , H01J37/32 , H01L21/67
摘要： A semiconductor manufacturing apparatus includes a chamber that includes a station in which a substrate is provided, a substrate holder that is in the station and receives the substrate, and lower showerheads below the substrate holder, the lower showerheads including an isotropic showerhead having first nozzle holes that isotropically provide a first reaction gas on a bottom surface of the substrate, and a striped showerhead having striped nozzle regions and striped blank regions between the striped nozzle regions, the striped nozzle regions having second nozzle holes that non-isotropically provide a second reaction gas on the bottom surface of the substrate.
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公开(公告)号：US20200211847A1
公开(公告)日：2020-07-02
申请号：US16578245
申请日：2019-09-20
发明人： Ji Youn SEO , Ji Woon IM , Dai Hong KIM , Ik Soo KIM , Sang Ho RHA
IPC分类号： H01L21/033 , H01L21/02
摘要： A method of fabricating a semiconductor device and a semiconductor processing apparatus are provided. The method of fabricating a semiconductor device comprises preparing a semiconductor substrate having a front side and a back side, opposing each other, and forming a material layer on the semiconductor substrate. The material layer is formed on at least a portion of the back side of the semiconductor substrate while being formed on the front side of the semiconductor substrate. The material layer formed on the at least a portion of the back side of the semiconductor substrate is removed, while the material layer formed on the front side of the semiconductor substrate remains. A semiconductor process is performed to fabricate the semiconductor device using the material layer remaining on the front side of the semiconductor substrate.
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