Invention Application
- Patent Title: PROCESS FOR MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING IMPROVED CHARACTERISTICS
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Application No.: US17368437Application Date: 2021-07-06
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Publication No.: US20220005702A1Publication Date: 2022-01-06
- Inventor: Nicolo' PILUSO , Andrea SEVERINO , Stefania RINALDI Beatrice , AngeloAnnibale MAZZEO , Leonardo CAUDO , Alfio RUSSO , Giovanni FRANCO , Anna BASSI
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Priority: IT102020000016279 20200706
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/02
Abstract:
A process for manufacturing a silicon carbide semiconductor device includes providing a silicon carbide wafer, having a substrate. An epitaxial growth for formation of an epitaxial layer, having a top surface, is carried out on the substrate. Following upon the step of carrying out an epitaxial growth, the process includes the step of removing a surface portion of the epitaxial layer starting from the top surface so as to remove surface damages present at the top surface as a result of propagation of dislocations from the substrate during the previous epitaxial growth and so as to define a resulting top surface substantially free of defects.
Public/Granted literature
- US2137129A Rotary valve for internal combustion engines Public/Granted day:1938-11-15
Information query
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